Pentacene thin-film transistors with HfO2 gate dielectric annealed in NH3 or N2O [PDF]
, 2008 Pentacene-based Organic Thin-Film Transistor (OTFT) with HfO 2 as gate dielectric is studied in this work. The HfO2 dielectric was prepared by RF sputtering at room temperature, and subsequently annealed in N 2O or NH 3 at 200 °C.
Che, CM +5 more
core +1 more source
Simulation and Compact Modeling of Organic Thin Film Transistors (OTFTs) for Circuit Simulation
International Journal of Advanced Applied Physics Research, 2019 In this paper we present TCAD simulation and compact modeling of OTFTs. Finite element method (FEM) based numerical simulations have been performed using density of state model and field dependent mobility model to simulate the electrical behavior of the OTFT devices. Further Universal Organic Thin Film Transistor (UOTFT) compact model has been applied
Dwivedi A.D.D +3 more
openaire +1 more source
Direct imaging of defect formation in strained organic flexible electronics by Scanning Kelvin Probe Microscopy [PDF]
, 2016 The development of new materials and devices for flexible electronics depends crucially on the understanding of how strain affects electronic material properties at the nano-scale.
Bonfiglio, A +7 more
core +1 more source
Enhanced mobility for pentacene TFT built on NH3-annealed thermally grown SiO2 [PDF]
, 2006 We have enhanced the mobility of pentacene OTFTs using NH 3-annealed SiO2 as gate dielectric and this annealing method is often applied in the semiconductor industry for inorganic transistors.
Che, CM, Cheng, KKH, Kwan, MC, Lai, PT
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Compact modeling of organic thin film transistors with solution processed octadecyl substituted tetrabenzotriazaporphyrin as an active layer [PDF]
, 2017 Using 70nm thick spin-coated film of newly synthesized octadecyl substituted copper tetrabenzotriazaporphyrin (10CuTBTAP) as an active layer on a highly doped silicon (110) gate electrode substrates, output characteristics and transfer characteristics of
Cammidge, Andrew N. +6 more
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High-performance pentacene thin-film transistor with ZrLaO gate dielectric passivated by fluorine incorporation [PDF]
, 2013 postprin
Che, CM +4 more
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Effects of annealing temperature and gas on pentacene OTFTs with HfLaO as gate dielectric [PDF]
, 2012 Pentacene organic thin-film transistors (OTFTs) with high-κ HfLaO as gate insulator were fabricated. HfLaO film was prepared by sputtering method. To improve the film quality, the dielectric was annealed in N 2, NH 3, or O 2 at two temperatures, i.e ...
Che, CM +5 more
core +1 more source
A tetrabenzotriazaporphyrin based organic thin film transistor: Comparison with a device of the phthalocyanine analogue [PDF]
, 2015 The characteristics of bottom-gate bottom-contact organic thin film field-effect transistors (OTFTs) with 70 nm thick films of solution processed non-peripherally octahexyl-substituted nickel tetrabenzo triazaporphyrin (6NiTBTAP) molecules as active ...
Cammidge, AN +4 more
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Potential up-scaling of inkjet-printed devices for logical circuits in flexible electronics [PDF]
, 2015 Inkjet Technology is often mis-believed to be a deposition/patterning technology which is not meant for high fabrication throughput in the field of printed and flexible electronics.
Baumann, Reinhard R. +6 more
core +1 more source
Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric [PDF]
, 2013 Pentacene organic thin-film transistor (OTFT) with high-K HffiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied.
Che, CM +4 more
core +1 more source