Results 91 to 100 of about 76,567 (293)

Hydrogen‐Bond–Driven Ion Retention in Electrolyte‐Gated Synaptic Transistors

Advanced Functional Materials, EarlyView.
Anion molecular design governs ion–polymer interactions in electrolyte‐gated synaptic transistors. Asymmetric anions induce hydrogen‐bond interactions that suppress ion back‐diffusion and stabilize doping, enabling enhanced nonvolatile synaptic properties.
Donghwa Lee, Hyoik Jang, Myeongjin An, Junho Sung, Chaeyeon Han, Eunho Lee   +5 more
wiley   +1 more source

Self‐Healing and Stretchable Synaptic Transistor

Advanced Functional Materials, EarlyView.
A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo, Sangyong Park, Yoonyi Jeong, Jaepyo Jang, Duhwan Seong, In Soo Kim, Myung‐Gil Kim, Mikyung Shin, Minah Suh, Donghee Son, Jin‐Hong Park   +10 more
wiley   +1 more source

Reducing the Barrier Height in Organic Transistors

Advanced Electronic Materials
Reducing the Schottky barrier height and Fermi level de‐pinning in metal‐organic semiconductor contacts are crucial for enhancing the performance of organic transistors.
Arash Ghobadi, Cherian J. Mathai, Jacob Cook, Guang Bian, Salahuddin Attar, Mohammed Al‐Hashimi, Shubhra Gangopadhyay, Suchismita Guha   +7 more
doaj   +1 more source

Field-Effect Transistors on Tetracene Single Crystals

, 2003
We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$. The non-monotonous
A. F. Morpurgo, Campbell I. H., R. W. I. de Boer, T. M. Klapwijk   +3 more
core   +2 more sources

Recent progress in photoactive organic field-effect transistors

Science and Technology of Advanced Materials, 2014
Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs.
Yutaka Wakayama, Ryoma Hayakawa, Hoon-Seok Seo   +2 more
doaj   +1 more source

High-Mobility Pentacene-Based Thin-Film Transistors With a Solution-Processed Barium Titanate Insulator [PDF]

, 2011
—Pentacene-based organic thin-film transistors (OTFTs) with solution-processed barium titanate (Ba1.2Ti0.8O3) as a gate insulator are demonstrated. The electrical properties of pentacene-based TFTs show a high field-effect mobility of 8.85 cm2 · V−1 ...
Adriyanto, Feri, Huang, Wen-Chieh, Hung, Yu-Ming, Kuo, Shu-Hao, Wang, Yeong-Her, Wei, Chia-Yu   +5 more
core  

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Organic film thickness influence on the bias stress instability in Sexithiophene Field Effect Transistors

, 2009
In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 nm to 130 nm on Si/SiO2 substrates.
A. Benor, A. Cassinese, A. Loi, A. Salleo, A.R. Volkel, C. Aruta, C. Aruta, C. Bartic, C.R. Kagan, E.J. Meijer, F. Dinelli, F. V. Di Girolamo, G. Cu, G. Horowitz, H.L. Gomes, H.L. Gomes, J. Kakalios, J.B. Chang, J.S. Campbell, L. Zhen, M. Barra, M. Riccio, P. D’Angelo, P. D’Angelo, P.F. Baude, R.B. Wehrspohn, R.B. Wehrspohn, R.S. Crandall, S.G.J. Mathijssen, T. Miyadera, W.A. Schonveld, W.B. Jackson, Y.Y. Lin   +32 more
core   +1 more source

Optoelectrical Devices for Neural Interfacing: Engineering Integration, Stability, and Multimodal Sensing

Advanced Healthcare Materials, EarlyView.
Implantable optoelectrical devices are an effective resource for the modulation and monitoring of neural activity with high spatiotemporal resolution. This review discusses current challenges faced by these devices and outlines future perspectives for the development of next‐generation neural interfaces targeting chronic, multisite, and multimodal ...
Stella Aslanoglou, Barbara Spagnolo, Antonio Balena, Massimo De Vittorio, Ferruccio Pisanello   +4 more
wiley   +1 more source

Simultaneous Dual‐Plasticity Organic Synaptic Transistor for Neuromorphic Computing

Advanced Electronic Materials
Neuromorphic computing systems require artificial synaptic devices capable of emulating complex biological neural functions. This study presents a dinaphtho[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene (DNTT)‐based organic field‐effect transistor that ...
Tomas Vincze, Michal Hanic, Martin Berki, Martin Weis   +3 more
doaj   +1 more source