Results 111 to 120 of about 12,858 (260)

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source

Advanced Manufacturing of Composite‐Based Systems for Energy Applications

Advanced Materials Technologies, EarlyView.
Advanced manufacturing enables the integration of polymers, ceramics, metal oxides, and composites into architected microstructures with tailored transport pathways. By coupling material selection, manufacturing strategy, and structural design, multifunctional energy systems can simultaneously improve electrochemical performance, thermal management ...
Sri Vaishnavi Thummalapalli, Dhanush Patil, Libin Yang, M. Taylor Sobczak, Anshul Kulkarni, Xiao Sun, Arunachalam Ramanathan, Tiantian Li, Ramaraja P. Ramasamy, Jason J. Locklin, Yanyu Chen, Xianqiao Wang, Arunachala Mada Kannan, Kenan Song   +13 more
wiley   +1 more source

Thiazole fused S,N-heteroacene step-ladder polymeric semiconductors for organic transistors. [PDF]

Chem Sci, 2022
Attar S, Yang R, Chen Z, Ji X, Comí M, Banerjee S, Fang L, Liu Y, Al-Hashimi M.   +8 more
europepmc   +1 more source

Unveiling the Hidden Geometry of OECTs: Contact‐Semiconductor Overlap Driven Errors in Volumetric Capacitance

Advanced Materials Technologies, EarlyView.
This work examines how contact–semiconductor overlap influences volumetric capacitance extraction in organic electrochemical transistors as device dimensions shrink. It shows that neglecting overlap leads to systematic, geometry‐driven errors in capacitance values.
Renan Colucci, Marcos Luginieski, Germán D. Gómez Higuita, Gerwin Dijk, Bianca de A. Feitosa, Yaakov Tuchman, Alberto Salleo, Gregório Couto Faria   +7 more
wiley   +1 more source

Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors. [PDF]

Sci Rep, 2021
Geiger M, Hagel M, Reindl T, Weis J, Weitz RT, Solodenko H, Schmitz G, Zschieschang U, Klauk H, Acharya R.   +9 more
europepmc   +1 more source

Ultrathin and Flexible Organic Light‐Addressable Potentiometric Sensors

Advanced Materials Technologies, EarlyView.
The first ultrathin, fully organic, and flexible light‐addressable potentiometric sensor (LAPS) is demonstrated. With a thickness of only 2.3–2.9 µm, this standalone film offers sensitivity to electrolyte potential and stable performance for over 170 days.
Ami Ichikawa, Yudai Hemmi, Yuanyuan Guo, Georgios Bairaktaris, Carl Frederik Werner, Tomohiko Murayama, Hiroyuki Matsui   +6 more
wiley   +1 more source

Suppressing bias stress degradation in high performance solution processed organic transistors operating in air. [PDF]

Nat Commun, 2021
Iqbal HF, Ai Q, Thorley KJ, Chen H, Chen H, McCulloch I, Risko C, Anthony JE, Jurchescu OD.   +8 more
europepmc   +1 more source

Printed SWCNT‐Based p–n Junction Thin‐Film Near‐Infrared Photoresistors Enabled by a Sustainable Furan‐Derived π‐Conjugated Polymer

Advanced Materials Technologies, EarlyView.
A sustainable polymer–carbon nanotube bilayer enables efficient near‐infrared photodetection in a simple lateral planar p–n junction thin‐film architecture. Thermal side‐chain cleavage enhances interfacial coupling, shifts the dominant photoresponse from 800 to 1000 nm, and substantially improves device performance.
Jenner H. L. Ngai, Zhao Li, Jianfu Ding, Yuning Li   +3 more
wiley   +1 more source

Organic Electronics Picks Up the Pace: Mask-Less, Solution Processed Organic Transistors Operating at 160 MHz. [PDF]

Adv Sci (Weinh), 2021
Perinot A, Giorgio M, Mattoli V, Natali D, Caironi M.   +4 more
europepmc   +1 more source

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

Advanced Materials Technologies, EarlyView.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob, Solbee Lee, Hansol Jeong, Sabiqun Nahar, Jin Jang   +4 more
wiley   +1 more source