Results 191 to 200 of about 58,476 (268)

Integrated Optoelectronic Model to Predict the External Quantum Efficiency of Single‐Layer TADF Organic Light‐Emitting Diodes

open access: yesAdvanced Electronic Materials, EarlyView.
An experimentally validated optoelectronic device model is presented to describe the efficiency and roll‐off behavior of single‐layer TADF OLEDs. By coupling charge transport, exciton dynamics, and optical outcoupling, the model reproduces the External Quantum Efficiency (EQE) across different emission layer thicknesses and temperatures, offering ...
Jawid Nikan   +4 more
wiley   +1 more source

Exceptional Antimodes in Multi‐Drive Cavity Magnonics

open access: yesAdvanced Electronic Materials, EarlyView.
Driven‐dissipative cavity‐magnonics provides a flexible platform for engineering non‐Hermitian physics such as exceptional points. Here, using a four‐port, three‐mode system with controllable microwave interference, antimodes and coherent perfect extinction (CPE) are realized, enabling active tuning to antimode exceptional points.
Mawgan A. Smith   +4 more
wiley   +1 more source

Synchronization of Analog Neuron Circuits With Digital Memristive Synapses: An Hybrid Approach

open access: yesAdvanced Electronic Materials, EarlyView.
An hybrid circuit mimicking neural units coupled using memristive synapses is introduced. The analog neurons provide flexibility and robustness, and the digital memristive coupling guarantees the full reconfigurability of the interconnection. The onset of a synchronized spiking behavior in two circuits mimicking the Izhikevich neuron is discussed from ...
Lamberto Carnazza   +3 more
wiley   +1 more source

Roll-to-Roll Gravure-Printed SWCNT Ring Oscillator for Flexible Microfluidic Ion Sensing. [PDF]

open access: yesNanomaterials (Basel)
Sun J   +5 more
europepmc   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

open access: yesAdvanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner   +11 more
wiley   +1 more source

Engineering a Correlated Narrow‐Gap Semiconductor: Effects of Ga Substitution in EuZn2P2

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT The effect of Ga substitution on the electronic, magnetic, and low‐energy responses of the Zintl phase EuZn2P2${\rm EuZn}_2 {\rm P}_2$ is investigated by electrical transport, electron spin resonance (ESR), and terahertz time‐domain spectroscopy (THz‐TDS). Incorporating Ga into EuZn2P2${\rm EuZn}_2 {\rm P}_2$ (EuZn1.8Ga0.2P2${\rm EuZn}_{1.8} {\
Mateus Dutra   +13 more
wiley   +1 more source

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