Results 11 to 20 of about 153,536 (295)
New Journal of Physics, 2023 In this work, the changes in the energy of electrons and holes, oscillator strength and interband transition time when external fields are applied to a GaAs/AlGaAs semiconductor double ring grown by the droplet epitaxy technique are theoretically ...
A Radu, C Stan, D Bejan
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Biomolecules, 2020 The bright ultimately short lifetime enhanced emitter (BrUSLEE) green fluorescent protein, which differs from the enhanced green fluorescent protein (EGFP) in three mutations, exhibits an extremely short fluorescence lifetime at a relatively high ...
Anastasia V. Mamontova +3 more
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New Journal of Physics, 2021 The vacuum Rabi splitting of polaritonic eigenmodes in semiconductor microcavities scales with the square root of the oscillator strength, as predicted by the coupled oscillator model and confirmed in many experiments.
Junhui Cao +2 more
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Experimental Mo
Journal of Physics B: Atomic, Molecular and Optical Physics, 2001 Experimental branching fractions (BFs) of Mo (II,) ranging in wavelength from 1970 to 4370 Angstrom, have been measured from intensity calibrated spectra recorded with the Lund UV Fourier transform spectrometer (FTS). Radiative lifetimes for 10 levels have been measured using the method of laser-induced fluorescence (LIF).
Sikstrom, C. M +6 more
openaire +3 more sources
Extended Atomic Structure Calculations for W11+ and W13+
Atoms, 2020 We report an extensive and elaborate theoretical study of atomic properties for Pm-like and Eu-like Tungsten using Flexible Atomic Code (FAC). Excitation energies for 304 and 500 fine structure levels are presented respectively, for W11+ and W13 ...
Narendra Singh +2 more
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Computation of Characteristics of C IV Transitions
East European Journal of Physics, 2023 In this research, we computed transition probabilities, line strength, and oscillator strengths of more than 5000 transitions in C IV. Very few values of these spectroscopic characteristics were previously known and reported.
Muhammad Saeed +3 more
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Investigation of GeSn/Ge quantum dots’ optical transitions for integrated optics on Si substrate
Results in Physics, 2019 The effects of self-organized GeSn/Ge quantum dot’s size and shape on the direct band gap interband emission energy, oscillator strength and radiative lifetime are evaluated.
Mourad Baira +4 more
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Quantum State Sensitivity of an Autoresonant Superconducting Circuit [PDF]
, 2012 When a frequency chirped excitation is applied to a classical high-Q nonlinear oscillator, its motion becomes dynamically synchronized to the drive and large oscillation amplitude is observed, provided the drive strength exceeds the critical threshold ...
Ginossar, E. +5 more
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Atoms, 2023 The growing interest in atomic structures of moderately stripped alkali-like ions in the diagnostic study and modeling of astrophysical and laboratory plasma makes an accurate many-body study of atomic properties inevitable. This work presents transition
Swapan Biswas +4 more
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Dispersion Characterization of conductive polymer
International Journal of Electrochemical Science, 2015 Pure and doped PMMA films with NiCl2 have been deposited by using casting method. Optical measurements were studied by UV-VIS technique in the wavelength ranges (200-800)nm. The optical properties and dispersion parameters of films have been studied as a
Saad F. Oboudi +5 more
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