Results 21 to 30 of about 274 (109)
HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks
, 2015 International audienceIn this paper, the use of HfO 2 -based oxide-based resistive memory (OxRAM) devices operated in binary mode to implement synapses in a convolutional neural network (CNN) is studied.
Bichler, Olivier +7 more
core +1 more source
Insight into physics‐based RRAM models – review
The Journal of Engineering, Volume 2019, Issue 7, Page 4644-4652, July 2019., 2019 This article presents a review of physical, analytical, and compact models for oxide‐based RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect resistive switching and the different current conduction mechanisms that exist in the models is performed.
Arya Lekshmi Jagath +3 more
wiley +1 more source
Opportunities for integrated photonic neural networks
Nanophotonics, Volume 9, Issue 13, Page 4221-4232, June 2018., 2018 Abstract Photonics offers exciting opportunities for neuromorphic computing. This paper specifically reviews the prospects of integrated optical solutions for accelerating inference and training of artificial neural networks. Calculating the synaptic function, thereof, is computationally very expensive and does not scale well on state‐of‐the‐art ...
Pascal Stark +4 more
wiley +1 more source
, 2019 International audienceOxRAM technology is one of the strongest candidates for embedded solutions at scaled nodes (<; = 40nm), thanks mainly to its low manufacturing cost.
G. Audoit +33 more
core +1 more source
, 2021 International audienceAerospace applications are attractive candidates to embed Artificial Neural Networks despite their excellent parallel processing capability and reduced energy consumption.
Girard, Patrick +3 more
core +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
, 2023 International audienceAn oxide-based random access memory (OxRAM) coupled with a MOSFET selector is widely used in memory bitcell for ReRAM technology, but the consequences of the choice of the selector parameters on the reliability are not fully ...
Rottner, J. +8 more
core +1 more source
Void‐Controlled Resistive Switching in MnTe2‐Based Device
physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 4, April 2026.In this study, we investigate the resistive switching characteristics of MnTe2, a three‐dimensional TMD, for the first time. The switching mechanism is governed by thermally assisted electromigration of Mn and Te ions, which drives the formation and healing of nanoscale voids within the device.
Shih-Yuan Li +4 more
wiley +1 more source
Review of Memristors for In‐Memory Computing and Spiking Neural Networks
Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari +2 more
wiley +1 more source
, 2016 RRAM technology relying on transitional metal oxides (namely OxRAM) is about to reach the industrial stage. Nevertheless the physical-based understanding of the material and process implications at device and circuit levels is still not completely clear,
Deleruyelle, Damien +10 more
core +1 more source