Results 31 to 40 of about 274 (109)

The Evolution of Gas Sensors Into Neuromorphic Systems

Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.
Gas sensors are vital for various applications, but conventional designs rely on separate sensing, memory, and processing units, limiting speed, power efficiency, and adaptability. Neuromorphic gas sensing overcomes these constraints by integrating all functions in a single device.
Kevin Dominguez, Dhananjay D. Kumbhar, Abdul Momin Syed, Regina C. Martin, Nazek El‐Atab   +4 more
wiley   +1 more source

Investigating non-volatile memory architectures for neuromorphic systems with CMOS spike-timed synaptic plasticity

Discover Computing
Learning is crucial for the brain’s ability to adapt to changing conditions. We suggest a collection of novel neuromorphic construction circuits, adjustable synapse circuits, and CMOS Spike Based Driven Synaptic Plasticity (CSBDSP) erudition algorithm ...
Joshika Sharma, Shyam Akashe, Govind Murari Upadhyay   +2 more
doaj   +1 more source

Structural and Electrical Behavior of Swift Heavy Ion Irradiated Hafnium Oxide Polymorphs in Ferroelectric and Resistive Memories

Advanced Electronic Materials, Volume 11, Issue 21, December 17, 2025.
This study investigates the irradiation resistance of different HfO2‐x stacks to swift heavy ions with different energies. The results demonstrate that Ca‐ion irradiation has a negligible effect on the crystallinity and switching properties of the functional layers.
Philipp Schreyer, David Lehninger, Tobias Vogel, Tianren Zhang, Taewook Kim, Eszter Piros, Yingxin Li, Yu Duan, Maximilian Lederer, Konrad Seidel, Christina Trautmann, Eugenia Toimil‐Molares, Lambert Alff   +12 more
wiley   +1 more source

Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory

physica status solidi (a), Volume 221, Issue 22, November 2024.
Cooperation between RWTH Aachen and Infineon Technologies investigates the key reliability aspects of resistive‐switching valence change memory (VCM redox‐based resistive switching random access memory), being variability, retention, and endurance. Experimental data on a Mbit scale are presented for VCM devices integrated into 28 nm CMOS.
Stefan Wiefels, Nils Kopperberg, Karl Hofmann, Jan Otterstedt, Dirk Wouters, Rainer Waser, Stephan Menzel   +6 more
wiley   +1 more source

Dynamics of Analog Switching Behavior in Thin Polycrystalline Barium Titanate

Advanced Electronic Materials, Volume 10, Issue 6, June 2024.
Engineering of interfaces and point defects in ferroelectric memristors provides a powerful tool to design non‐volatile memory devices for neuromorphic computing. The developed novel drift‐diffusion model built on a memristive device of mixed electron‐ionic nature can be used to predict the resistive switching effects based on the combined contribution
Natalia V. Andreeva, Eugeny A. Ryndin, Anatoliy E. Petukhov, Oleg Y. Vilkov, Amgad A. Al‐Saman   +4 more
wiley   +1 more source

Electronic Synapses Enabled by an Epitaxial SrTiO3‐δ / Hf0.5Zr0.5O2 Ferroelectric Field‐Effect Memristor Integrated on Silicon

Advanced Functional Materials, Volume 34, Issue 8, February 19, 2024.
The integration of thin Hf0.5Zr0.5O2 ferroelectric and SrTiO3‐δ semiconductor films in a field effect memristor on silicon, breaks new grounds for the development of ferroelectric artificial electronic synapses. By dynamically adjusting their synaptic strength to mimic short‐ and long‐term memory plasticity, such devices can emulate the behavior of ...
Nikitas Siannas, Christina Zacharaki, Polychronis Tsipas, Dong Jik Kim, Wassim Hamouda, Cosmin Istrate, Lucian Pintilie, Martin Schmidbauer, Catherine Dubourdieu, Athanasios Dimoulas   +9 more
wiley   +1 more source

OxRAM-Based Non Volatile Flip-Flop in 28nm FDSOI

, 2014
International audienceThis paper presents a robust OxRAM-based nonvolatile flip-flop (NVFF) solution, designed for deep nano-scaled CMOS technologies. Forming, set and reset operations rely on a reliable design approach using thin gate oxide CMOS.
Thomas, Olivier, J-M. Portal, O. Thomas, N. Jovanovic, Naviner, Lirida A. B., Nikolic, Boris, L. Naviner, Portal, Jean-Michel, B. Nikolic, Vianello, Elisa, E. Vianello, Jovanovic, Natalija, Naviner, Lirida   +12 more
core   +1 more source

OxRAM BER Scaling Trends on 4 kb Mixed-Diameter Test Vehicle

, 2020
International audienceIn this work we present a 4 kb OxRAM test structure which includes devices of diameter ranging from 30 nm to 170 nm. Thanks to a quasi-continuous range of cell sizes, this matrix allows to evaluate the impact of aggressive cell ...
Sandrini, J., Cagli, C., V. Meli, Gaillard, F., Grenouillet, L., F. Gaillard, Meli, V., J. Sandrini, C. Cagli, N. Castellani, Castellani, N., L. Grenouillet   +11 more
core   +1 more source

Heavy ion irradiation hardening study on 4kb arrays HfO$_2$-based OxRAM

, 2020
International audienceHfO$_2$ based OxRAM devices integrated in Back End Of Line (BEOL) of 130nm CMOS have been exposed to extreme irradiation conditions related to extensive journey in space, supernova or nuclear disaster exposure: 1.635 GeV Au ion ...
Lefèvre, Gauthier, Alff, Lambert, Kaiser, Nico, Grenouillet, Laurent, Charpin-Nicolle, Christelle, Piros, Eszter, Petzold, Stefan, Nowak, Etienne, Guillaume, Nicolas, Trautmann, C., Vogel, Tobias, David, Sylvain   +11 more
core   +1 more source

Time-multiplexed In-memory computation scheme for mapping Quantized Neural Networks on hybrid CMOS-OxRAM building blocks

, 2022
In this work, we experimentally demonstrate two key building blocks for realizing Binary/Ternary Neural Networks (BNNs/TNNs): (i) 130 nm CMOS based sigmoidal neurons and (ii) HfOx based multi-level (MLC) OxRAM-synaptic blocks.
Manan Suri, Parmar, Vivek, Kingra, Sandeep Kaur, Sharma, Manoj, Suri, Manan, Sandeep Kaur Kingra, Manoj Sharma, Vivek Parmar   +7 more
core   +1 more source