Results 31 to 40 of about 505 (135)
Low‐Power Computing with Neuromorphic Engineering
Advanced Intelligent Systems, Volume 3, Issue 2, February 2021., 2021 Neuromorphic computing is intensively investigated for decreasing power consumption and enriching computation functions. A brief introduction on the characteristics of neuromorphic computing and an overview on emerging devices for low‐power neuromorphic computing are provided, and a few computation models for artificial neural networks and a few ...
Dingbang Liu, Hao Yu, Yang Chai
wiley +1 more source
OxRAM-based non volatile flip-flop in 28nm FDSOI [PDF]
2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS), 2014 This paper presents a robust OxRAM-based nonvolatile flip-flop (NVFF) solution, designed for deep nano-scaled CMOS technologies. Forming, set and reset operations rely on a reliable design approach using thin gate oxide CMOS. The NVFF is benchmarked against a standard FF in 28nm CMOS FDSOI.
Jovanovic, Natalija +5 more
openaire +2 more sources
An Energy-Efficient Current-Controlled Write and Read Scheme for Resistive RAMs (RRAMs)
IEEE Access, 2020 Energy efficiency remains one of the main factors for improving the key performance markers of RRAMs to support IoT edge devices. This paper proposes a simple and feasible low power design scheme which can be used as a powerful tool for energy reduction ...
H. Aziza +4 more
doaj +1 more source
Self-Organizing Neural Networks Based on OxRAM Devices under a Fully Unsupervised Training Scheme. [PDF]
Materials (Basel), 2019 A fully-unsupervised learning algorithm for reaching self-organization in neuromorphic architectures is provided in this work. We experimentally demonstrate spike-timing dependent plasticity (STDP) in Oxide-based Resistive Random Access Memory (OxRAM) devices, and propose a set of waveforms in order to induce symmetric conductivity changes.
Pedró M +4 more
europepmc +6 more sources
Pragmatic OxRAM compact model ready to use for design studies
Solid-State Electronics, 2023 We propose a pragmatic OxRAM device compact model describing SET, RESET, read operations and accounting for variability. The model is implemented in Verilog-A and usable with standard SPICE simulator. The objective is not to provide physical insights into OxRAM device operation but to develop a robust model, simple to calibrate and accounting for the ...
Lacord, Joris +2 more
openaire +2 more sources
Configurable Operational Amplifier Architectures Based on Oxide Resistive RAMs [PDF]
, 2019 International audienceThis paper introduces memristor-based operational amplifiers in which semiconductor resistors are suppressed and replaced by memristors. The ability of the memristive elements to hold several resistance states is exploited to design
Aziza, Hassen +3 more
core +3 more sources
Impact of Line Resistance Combined with Device Variability on Resistive RAM Memories [PDF]
, 2018 International audienceIn this paper, the performance and reliability of oxide-based Resistive RAM (ReRAM) memory is investigated in a 28nm FDSOI technology versus interconnects resistivity combined with device variability.
Aziza, Hassan +2 more
core +4 more sources
HfO2-based resistive switching memory devices for neuromorphic computing [PDF]
, 2022 HfO2-based resistive switching memory (RRAM) combines several outstanding properties, such as high scalability, fast switching speed, low power, compatibility with complementary metal-oxide-semiconductor technology, with possible high-density or three ...
Brivio, S, Ielmini, D, Spiga, S
core +2 more sources
The Impact of On-chip Communication on Memory Technologies for Neuromorphic Systems
, 2018 Emergent nanoscale non-volatile memory technologies with high integration density offer a promising solution to overcome the scalability limitations of CMOS-based neural networks architectures, by efficiently exhibiting the key principle of neural ...
Manohar, Rajit, Moradi, Saber
core +1 more source
Insight into physics‐based RRAM models – review
The Journal of Engineering, Volume 2019, Issue 7, Page 4644-4652, July 2019., 2019 This article presents a review of physical, analytical, and compact models for oxide‐based RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect resistive switching and the different current conduction mechanisms that exist in the models is performed.
Arya Lekshmi Jagath +3 more
wiley +1 more source