Results 181 to 190 of about 46,362 (283)

Copper Contact for Perovskite Solar Cells: Properties, Interfaces, and Scalable Integration

open access: yesAdvanced Energy and Sustainability Research, EarlyView.
Copper electrodes, as low‐cost, scalable contacts for perovskite solar cells, offer several advantages over precious metals such as Au and Ag, including performance, cost, deposition methods, and interfacial engineering. Copper (Cu) electrodes are increasingly considered practical, sustainable alternatives to noble‐metal contacts in perovskite solar ...
Shuwei Cao   +4 more
wiley   +1 more source

Development of Vacuum-Chamber-Type Capacitive Micro-Pressure Sensors. [PDF]

open access: yesMicromachines (Basel)
Yang LJ   +5 more
europepmc   +1 more source

Cadmium and Zinc‐Doped p‐type Sb2Se3 Single Crystals and Solar Cells

open access: yesAdvanced Energy and Sustainability Research, EarlyView.
Cd and Zn were assessed as candidate p‐type dopants in Sb2Se3 single crystals in concentrations between 1016‐1020 cm−3. Both are effective in inducing p‐type conductivity, however Cd doped crystals exhibit lower resistivity across a wider range of dopant levels.
Thomas P. Shalvey   +13 more
wiley   +1 more source

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

open access: yesAdvanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj   +2 more
wiley   +1 more source

Cryogenic Neuromorphic Synaptic Behavior in 180 nm Silicon Transistors for Emerging Computing Systems

open access: yesAdvanced Intelligent Systems, EarlyView.
This study investigates the neuromorphic plasticity behavior of 180 nm bulk complementary metal oxide semiconductor (CMOS) transistors at cryogenic temperatures. The observed hysteresis data reveal a signature of synaptic behavior in CMOS transistors at 4 K.
Fiheon Imroze   +8 more
wiley   +1 more source

Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications

open access: yesAdvanced Intelligent Systems, EarlyView.
A charge‐domain ternary content‐addressable memory using one capacitor one nanoelectromechanical memory switch (1C‐1N TCAM) is proposed for energy‐efficient, high‐reliability computations. Integrated with the back‐end‐of‐line process, the 1C‐1N TCAM leverages the air gap capacitance to achieve a high capacitance ratio and ternary functionality.
Jin Wook Lee   +5 more
wiley   +1 more source

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