Results 171 to 180 of about 10,280 (293)

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Radio-Frequency Characteristics of Stacked Metal-Insulator-Metal Capacitors in Radio-Frequency CMOS Devices. [PDF]

Micromachines (Basel)
Choi TM, Lee HR, Pyo SG.
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Colossal emergent inductance in a molecular memristor. [PDF]

Sci Rep
Oshima Y, Usami R, Moriya T, Takenobu T, Takaishi S.   +4 more
europepmc   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source

Modeling and Design of a Soft Capacitive Slip Sensor with Fluid Dielectric Interlayer. [PDF]

Micromachines (Basel)
Landi E, Lisini Baldi T, Pallaoro M, Micheletti F, Carli F, Fort A.   +5 more
europepmc   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

An Improved Nonlinear Capacitance Model for GaN HEMTs Based on the Angelov Model. [PDF]

Micromachines (Basel)
Miao Y, Yuan Q, Wang C, Cheng J.
europepmc   +1 more source

Advancing Fruit Bioimpedance Monitoring With Sustainable, Soft, And Bio‐Based Electrodes Beyond ECG

Advanced Electronic Materials, EarlyView.
Electrical impedance spectroscopy enables non‐destructive fruit quality monitoring, but conventional ECG and needle electrodes compromise signal stability, fruit physiology, and sustainability. This perspective highlights the transition toward soft, biocompatible, and biodegradable electrode interfaces based on natural substrates, bio‐derived ...
Sundus Riaz, Ahmed Rasheed, Angelo Zanella, Almudena Rivadeneyra, Paolo Lugli, Luisa Petti, Pietro Ibba   +6 more
wiley   +1 more source

Wirelessly Interrogated, Implantable Capacitive MEMS Sensors for Continuous Intraocular Pressure Monitoring. [PDF]

Sensors (Basel)
Li L, Zaman A, Ayyala R, Wang J.
europepmc   +1 more source