Results 181 to 190 of about 252,309 (284)

Hybrid Spring‐Coupled Broadband Energy Harvester Integrated with CuSCN Functionalized Triboelectric Vibration Sensor for Self‐Sustainable Vehicular IoTs

Advanced Science, EarlyView.
A self‐sustainable vehicular vibration and indoor environment monitoring IoT platform is developed which integrates a hybrid spring‐coupled broadband energy harvester with a machine learning‐assisted PAN‐CuSCN nanofiber triboelectric vibration sensor for subtle‐to‐wide‐range vibration detection and road/speed classification.
Trilochan Bhatta, Gagan Bahadur Pradhan, Shital Sharma, MoonSeong Jo, Aklesh Teli, Hochan Chang, Jae Yeong Park   +6 more
wiley   +1 more source

Decoding non-faradaic signal transduction in organic electrochemical transistor based biosensors. [PDF]

Nat Commun
Salvigni L, Nayak PD, Koklu A, Silva R, Hama A, Grünberg R, Arold ST, Inal S.   +7 more
europepmc   +1 more source

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

Advanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter, Ahmet Samil Demirkol, Ioannis Messaris, Christian Bruchatz, Eter Mgeladze, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff   +7 more
wiley   +1 more source

Smart Bandage Based on Batteryless NFC for Wireless Pressure and Wound State Monitoring. [PDF]

Biosensors (Basel)
Cujilema M, Villarino R, Girbau D, Lazaro A.   +3 more
europepmc   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Time-Domain Analysis of Rectangular Pulse Response in Capacitive Impedance Sensing Using Capacitively Coupled Contactless Electrodes. [PDF]

Sensors (Basel)
Wanta D, Smolik WT, Ivanenko M, Kryszyn J, Makowiecka O, Domański G, Wróblewski P, Midura M, Orzechowski M.   +8 more
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Analysis of vertical AND flash memory for energy-efficient, scalable, fast CIM beyond vertical NAND flash memory. [PDF]

Nano Converg
Ko J, Im J, Park SH, Gu J, Cho J, Hwang J, Koo RH, Kim J, Woo SY, Lee JH.   +9 more
europepmc   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source