Aging and Electrical Stability of DNTT Honey‐Gated OFETs
Advanced Electronic Materials, EarlyView.DNTT honey‐gated organic transistors were fabricated and evaluated to assess short‐ and long‐term stability under electrical stress and aging. Short‐term transfer measurements (five days, 40 sweeps/day) showed minimal parameter shift, while extended measurements revealed gradual degradation over weeks.
Douglas H. Vieira +8 more
wiley +1 more source
Parasitic Capacitance in High-Density Neural Electrode Arrays: Sources and Evaluation Methods. [PDF]
IEEE Trans Biomed EngGhazavi A, Troyk PR, Cogan SF.
europepmc +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses
Advanced Electronic Materials, EarlyView.Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol +7 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.For self‐aligned top‐gate amorphous InGaZnO thin‐film transistors (TFTs), a capacitance‐voltage‐based extraction technique that directly reconstructs a lateral doping profile and key parameters is proposed. The extracted profiles are validated by direct comparison with the transfer‐length method.
Seung Joo Myoung +16 more
wiley +1 more source
ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAM. [PDF]
ACS OmegaPark JM, Lee S, Lee J, Kwon JY.
europepmc +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
A New Grounding Scheme to Reduce the Electromagnetic Emission of Smart Power SoCs [PDF]
, 2009 Fiori, Franco, Merlin, M.
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Research Progress and Applications of Non‐Carrier‐Injection Electroluminescence
Advanced Electronic Materials, EarlyView.Non‐carrier‐injection electroluminescence (NCI‐EL) uses AC fields and displacement currents to trigger light from internal charge reservoirs, enabling minimalist emitters with remotely coupled terminals. This review maps shared mechanisms across organics, GaN, quantum dots, and TMDCs, compares planar, interdigital, single‐terminal, and coaxial designs,
Wei Huang +6 more
wiley +1 more source
S-Hybrid Step-Down DC-DC Converter-Analysis of Operation and Design Considerations [PDF]
, 2020 Le, Hanh-Phuc, Seo, Gab-Su
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