Results 141 to 150 of about 46,398 (294)

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

Advanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

All‐Solution‐Processed Perovskite Light‐Emitting Transistors Enabled by a Fully Organic Architecture

Advanced Electronic Materials, EarlyView.
Fully solution‐processed light‐emitting transistors based on CsPbBr3 perovskite nanocrystals (Pe‐LETs) are demonstrated using an all‐organic platform. By optimizing film formation and device integration, the Pe‐LETs achieve bright green emission with excellent color purity and a peak external quantum efficiency of 4.17 × 10−3 %, marking a step forward ...
Kelment Zahoaliaj, Alice Fappani, Francesca Pallini, Valentina Bellotti, Nicolò Quaresima, Margherita Bolognesi, Mario Prosa, Luca Beverina, Stefano Toffanin   +8 more
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Exceptional Antimodes in Multi‐Drive Cavity Magnonics

Advanced Electronic Materials, EarlyView.
Driven‐dissipative cavity‐magnonics provides a flexible platform for engineering non‐Hermitian physics such as exceptional points. Here, using a four‐port, three‐mode system with controllable microwave interference, antimodes and coherent perfect extinction (CPE) are realized, enabling active tuning to antimode exceptional points.
Mawgan A. Smith, Ryan D. McKenzie, Alban Joseph, Robert L. Stamps, Rair Macêdo   +4 more
wiley   +1 more source

Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics

Advanced Electronic Materials, EarlyView.
Transient voltage artifacts observed during ferroelectric switching are shown to originate from measurement circuitry rather than intrinsic negative capacitance. By correlating switching current, time scale, and series resistance, this work establishes practical design rules for reliable pulse‐switching experiments and circuit integration of ...
Marin Alexe
wiley   +1 more source

Ferroelectric HfO2/ZrO2 Superlattice Capacitors With High Center to Edge Wafer‐Scale Uniformity

Advanced Electronic Materials, EarlyView.
“Enhanced wafer‐scale device uniformity on 150 mm wafers is demonstrated using ferroelectric superlattice HfO2/ZrO2 (HZO) capacitors, as compared to conventional solid solution HZO capacitors. Superlattice HZO exhibits improved ferroelectric memory properties, including a broader polarization window, greater endurance, reduced leakage, and superior ...
Oscar Kaatranen, Patrik Eskelinen, Sampo Inkinen, Olli‐Pekka Kilpi, Karl‐Magnus Persson   +4 more
wiley   +1 more source

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

Advanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter, Ahmet Samil Demirkol, Ioannis Messaris, Christian Bruchatz, Eter Mgeladze, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff   +7 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

A Phase-Adjustable Noise-Shaping SAR ADC for Mitigating Parasitic Capacitance Effects from PIP Capacitors. [PDF]

Sensors (Basel)
Ouyang X, Kuang H, Kong D, Cheng Z, Yuan H.   +4 more
europepmc   +1 more source