Results 121 to 130 of about 10,280 (293)

Concurrently Achieving 4.6 W/M2 and 120,000 Cyclability Enabled by Extendable Swing Arms in Rotational Triboelectric Nanogenerator

Advanced Science, EarlyView.
A rotational energy harvesting device that successfully reconciles high power density with mechanical durability through a hybrid sliding‐and‐bouncing kinematic mechanism is reported. The success reported in our paper includes addressing a dilemma where enhanced electrical output comes at the cost of increased friction and wear, limiting the practical ...
Yihong Lin, Jiaming Zhou, In‐Yong Suh, Eunjong Kim, Kin Chiu Yip, Dae‐jin Kim, Jang‐Mook Jeong, Young‐Jun Kim, Jinyoung Jeon, Ju‐Hyuck Lee, Yoon‐Hwae Hwang, Sang‐Woo Kim, Dong‐Myeong Shin   +12 more
wiley   +1 more source

Flexible organic integrated circuits free of parasitic capacitance fabricated through a simple dual self‐alignment method

SmartMat
In integrated circuits (ICs), the parasitic capacitance is one of the crucial factors that degrade the circuit dynamic performance; for instance, it reduces the operating frequency of the circuit.
Baichuan Jiang, Xiao Han, Yu Che, Wenbin Li, Hongxian Zheng, Jun Li, Cailing Ou, Nannan Dou, Zixiao Han, Tingyu Ji, Chuanhui Liu, Zhiyuan Zhao, Yunlong Guo, Yunqi Liu, Lei Zhang   +14 more
doaj   +1 more source

Analysis of a novel packaging technique for natural voltage balancing of series-connected SiC-MOSFETs

Power Electronic Devices and Components
This paper analyzes a novel packaging technique to improve the voltage-sharing performances of series-connected SiC-MOSFETs. The proposed method takes advantage of the parasitic capacitance network introduced by the packaging dielectric isolation layers ...
Luciano F.S. Alves, Pierre Lefranc, Jean-Christophe Crebier, Pierre-Olivier Jeannin, Benoit Sarrazin   +4 more
doaj   +1 more source

High‐Power Terahertz Emission from Picosecond Nano‐Plasma Switching Driven by Secondary Electron Emission Avalanche

Advanced Science, EarlyView.
A nano‐plasma device enables watt‐level on‐chip THz generation through picosecond switching triggered by secondary electron emission avalanche. An ultra‐dense electron sheet initiates nano‐plasma formation within a ∼100 nm gap, driving rapid energy release into an integrated resonator.
Guangyu Sun, Mohammad Rezaei, Yuheng Hu, Guan‐Jun Zhang, Elison Matioli   +4 more
wiley   +1 more source

Capacitance-Based Film Thickness Determination in Lubricated Machine Elements: From Dielectric-Gap Models to Constrained Electromechanical Inference

Lubricants
Capacitance-based methods are widely used to evaluate lubricant film thickness in machine elements where direct optical access is unavailable, especially in rolling bearings and other multi-contact components.
Dan Bai, Jintao Zheng, Xiaohui Wang, Hang Wang, Yan Li, Hui Cen   +5 more
doaj   +1 more source

Impedance‐Matched High‐Overtone Thickness‐Shear Bulk Acoustic Resonators With Scalable Mode Volume

Advanced Science, EarlyView.
A bottom‐electrode‐free high‐overtone bulk acoustic resonator is achieved by lateral excitation of antisymmetric thickness‐shear modes on a lithium‐niobate‐on‐silicon platform. Planar electrode geometry eliminates conventional loading along the resonance path and confines acoustic energy within the electrode gap.
Zi‐Dong Zhang, Zhen‐Hui Qin, Yi‐Han He, Yun‐Fei Cheng, Hao Yan, Si‐Yuan Yu, Ming‐Hui Lu, Yan‐Feng Chen   +7 more
wiley   +1 more source

Orthogonal Design of Competing Deprotonation Process in Cation‐Mediated Ni(OH)2 for Achieving Industrial Level Biomass Electrooxidation

Advanced Science, EarlyView.
A Cu‐mediated Ni(OH)2 catalyst with orthogonal activity by precise valence engineering simultaneously accelerates rate‐determining aldehyde C─H activation in HMF oxidation and impedes O─H deprotonation in competing OER. This multi‐functional synergistic catalysis enables FDCA production at industrial‐level current densities without sacrificing FEFDCA ...
Junge Yang, Zhengjie Chen, Lili Zhang, Tao Zhang, Shida Bao, Jing Peng, Hui Pan, Hui‐Ming Cheng   +7 more
wiley   +1 more source

Ultra Sensitive PIN-Diode Receiver Utilizing Photocurrent Integration on a Parasitic Capacitance

IEEE Access
This work presents a highly sensitive monolithic optical receiver in $\mathrm {0.35~\mu m}$ CMOS. The integrator-based frontend employs periodic photocurrent integration on a parasitic capacitance in combination with an ultra-low-capacitance PIN ...
Christoph Gasser, Simon Michael Laube, Kerstin Schneider-Hornstein, Horst Zimmermann   +3 more
doaj   +1 more source

A Universal Approach to Enhancing Silicon Hot‐Carrier Photodetectors for CMOS‐Compatible SWIR Imaging

Advanced Science, EarlyView.
Silicon hot‐carrier photodetectors offer a CMOS‐compatible pathway for SWIR detection but suffer from intrinsically low quantum efficiency. Here, we introduce a quasi‐generalized antireflection coating (QARC) that universally enhances optical absorption and quantum efficiency, enabling the first CMOS‐compatible SWIR imaging with silicon hot‐carrier ...
Eui‐Hyoun Ryu, Hyun Woo Ko, Sunghyun Hwang, Nayeon Kim, Ji‐Hwan Son, Sunghyun Han, Paul Hongsuck Seo, Jisoo Hong, Sang‐Jun Kim, Seon Kyu Yoon, Min‐Chul Park, In‐Ho Lee   +11 more
wiley   +1 more source

Carboxyphenolate Coordination Frameworks for High‐Voltage Calcium Storage

Advanced Science, EarlyView.
A hexaanionic carboxyphenolate coordination framework, Ca2‐M‐THBPD (M = Mg, Ca, Ba), exhibits ligand‐centered enolate‐quinonoid redox activity enabling tunable, high‐voltage Ca2+ storage (3.5 V vs Ca2+/Ca) modulated by spectator cations. The amorphous structure accommodates reversible divalent‐ion insertion, contributing to enhanced cycling stability ...
Vasudeva Rao Bakuru, Darsi Rambabu, Xiaodong Lin, Robert Markowski, Petru Apostol, Viliam Frano, Xiaolong Guo, Taniya Purkait, Shubhadeep Pal, Tom Goossens, Da Tie, Augustin Ramackers, Alexandru Vlad   +12 more
wiley   +1 more source