Results 71 to 80 of about 252,309 (284)

Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics

, 2018
Low-parasitic-capacitance 4H-SiC nMOSFETs using a novel self-aligned process were demonstrated. In these nMOSFETs, device characteristics including parasitic capacitance (gate-source, gate-drain, drain-source capacitance) were investigated.
Kurose, T., 495590, 495591, 495592, 牧野 高紘, 495593, Zetterling, C.-M., Ohshima, Takeshi, Östling, M., Maeda, T., 大島 武, Kuroki, S.-I., Makino, Takahiro, 495583, Ishikawa, S., 495584, 495585, 495586, Sezaki, H., 495587, 495588, 495589   +21 more
core   +2 more sources

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

“Smelltronics”—From Gas to Smell Sensing

Advanced Materials, EarlyView.
The emerging field of smelltronics, encompassing sensing technologies for complex volatile organic compounds, holds significant potential for extracting valuable chemical information. It facilitates the noninvasive, real‐time monitoring of humans, food, and the environment.
Takeshi Ono, Tsunaki Takahashi, Jiangyang Liu, Haruka Honda, Zeng Jing, Wataru Tanaka, Takuro Hosomi, Takeshi Yanagida   +7 more
wiley   +1 more source

Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high-electron-mobility transistors for X-band applications

ETRI Journal
The effects of the parasitic gate capacitance and gate resistance (Rg) on the radiofrequency (RF) performance are investigated in LG = 0.15 μm GaN high-electron-mobility transistors with T-gate head size ranging from 0.83 to 1.08 μm.
Sung-Jae Chang, Hyeon-Seok Jeong, Hyun-Wook Jung, Su-Min Choi, Il-Gyu Choi, Youn-Sub Noh, Seong-Il Kim, Sang-Heung Lee, Ho-Kyun Ahn, Dong Min Kang, Dae-Hyun Kim, Jong-Won Lim   +11 more
doaj   +1 more source

Interfacial Failure and Self‐Healing in Solid‐State Batteries

Advanced Materials, EarlyView.
Dynamic interfacial self‐healing offers an adaptive route to mitigate coupled mechanical, chemical, and electrochemical degradation in solid‐state batteries. This review connects evolving interfacial failure mechanisms with physical‐flow, chemical‐restoration, stimuli‐responsive, and electric‐field‐assisted repair strategies, highlighting targeted self‐
Xinxin Zhu, Tengfei Dai, Wendi Dou, Zhiheng Li, Kaihua Wen, Yanqun Lv, Ming Zhao, Jun Lu, Zaiping Guo   +8 more
wiley   +1 more source

Design and Analytical Study of Strays-Insensitive Switched-Capacitor Filters

Active and Passive Electronic Components, 1996
Use of analog circuit elements in active networks have become very common and the demand for their miniaturization is increasing day by day. Though several methods are available for the miniaturization of these elements through large scale integration on
Umesh Kumar
doaj   +1 more source

Electrolyte Engineering Challenges and Opportunities for Next‐Generation Aqueous Ammonium‐Ion Batteries

Advanced Materials, EarlyView.
Aqueous ammonium‐ion batteries (AAIBs) face a hydrogen‐bond paradox: the HB network enables fast NH4+ transport but triggers water decomposition. This review dissects this dilemma, evaluates multiple electrolyte engineering strategies, and outlines four future directions for next‐generation AAIB design ABSTRACT Aqueous ammonium‐ion batteries (AAIBs ...
Zi‐Hang Huang, Xiaoyu Liu, Shuai Mao, Lingfeng Zhu, Zhijun Wu, Hongge Pan, Tianyi Ma   +6 more
wiley   +1 more source

Dissecting Parasitic Capacitance in Nanosheet FETs: An Analytical Perspective

This work presents an approach to extract and analytically model the parasitic capacitance components in Nanosheet FETs. Along with parallel and fringing components, the junction capacitance which is a significant contributor to the total parasitic ...
A.K., Singh, Aishwarya K., N.R., Mohapatra, Nihar Ranjan, O., Maheshwari, Om   +2 more
core   +1 more source

Memristive Motion‐Streak Neuron for Spatiotemporal Multiple Object Detection

Advanced Materials, EarlyView.
This work proposes motion‐streak neuron hardware using amorphous In–Ga–Zn–O optoelectronic memristors and dynamic memristors for spatiotemporal multiple‐object detection. The motion streak neuron array processes optical and electrical stimuli, allowing speed‐dependent filament relaxation to encode motion trajectories.
Hyungjun Park, Jin Hong Kim, Hyun Wook Kim, Néstor Ghenzi, Sung Keun Shim, Joon‐Kyu Han, Min Jung Chung, Dong Hoon Shin, Kyung Seok Woo, Cheol Seong Hwang   +9 more
wiley   +1 more source

Parasitic Inductance Assessment of E-GaN DPT Circuit Through Finite Element Analysis

Energies
This article explores the high-frequency characteristics of gallium nitride (GaN) power-switching devices and evaluates their application performance using a double-pulse test (DPT) circuit model.
Xing-Rou Chen, Huang-Jen Chiu, Yun-Yen Chen, Yi-Xuan Yang, Yu-Chen Liu   +4 more
doaj   +1 more source