Results 51 to 60 of about 10,280 (293)

Maximizing throughput over parallel wire structures in the deep submicrometer regime. [PDF]

, 2003
In a parallel multiwire structure, the exact spacing and size of the wires determine both the resistance and the distribution of the capacitance between the ground plane and the adjacent signal carrying conductors, and have a direct effect on the delay ...
Tenhunen, H., Zheng, Li-Rong,, Zheng, L., Tenhunen, Hannu, Pamunuwa, D., Zheng, Li-Rong, Pamunuwa, Dinesh, Pamunuwa, Dinesh B., Tenhunen, Hannu,   +8 more
core   +1 more source

Inductance and Parasitic Capacitance Modeling of Spiral Air-core Inductor in MHz Inductive Power Transfer System [PDF]

, 2023
Air-core inductors are widely applied in high-frequency inductive power transfer (IPT) systems. However, its behavior at high frequencies is very different from that at low frequencies due to parasitic capacitance.
Andersen, Michael A.E., Huang, Jiasheng, Dou, Yi, Wang, Pinhe, Ouyang, Ziwei   +4 more
core   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Dipole‐Engineered Conductive Additives for Ultrastable Interphase Evolution in High‐Areal‐Capacity Silicon Anodes

Advanced Functional Materials, EarlyView.
In the work reported herein, dipole‐engineered sulfonated carbon nanofibers enable conductive additives to actively regulate interphase formation in silicon anodes. Polar sulfonyl groups guide electrolyte decomposition to form a compact LiF‐rich interphase while promoting robust integration with silicon.
Song Kyu Kang, Hyeonju Kim, Jeongbin Cho, Minseon Park, Taehun Kim, Seonghun Sin, Won Bae Kim   +6 more
wiley   +1 more source

Asymmetric gate induced drain leakage and body leakage in vertical MOSFETs with reduced parasitic capacitance [PDF]

, 2006
Vertical MOSFETs, unlike conventional planar MOSFETs, do not have identical structures at the source and drain, but have very different gate overlaps and geometric configurations.
Ashburn, P., Gili, E., Kunz, D., Hakim, M.M.A., Uchino, T., Hall, S., de Groot, C.H.   +6 more
core  

A Comparative Study on Parasitic Capacitance in Inductors With Series or Parallel Windings [PDF]

, 2022
In high-power medium-voltage applications, inductors usually have multiple windings on a single core, due to the high inductance value and high current stress.
Rannestad, Bjorn, Jorgensen, Jannick Kjar, Luan, Shaokang, Munk-Nielsen, Stig; id_orcid, Zhao, Hongbo, Zhou, Xiang, Dalal, Dipen Narendra; id_orcid, Beczkowski, Szymon Michal; id_orcid, Yan, Zhixing; id_orcid, Wang, Rui   +9 more
core   +1 more source

REDUCING PARASITIC CAPACITANCE IN MEDIUM-VOLTAGE INDUCTORS [PDF]

, 2022
The present invention relates to inter alia to a conductor having at least two windings where each of the two windings preferably has layered configuration of turns, where each layer of a winding preferably is serially connected.
Munk-Nielsen, Stig; id_orcid, Zhao, Hongbo   +1 more
core   +3 more sources

A Transformer Design for High-Voltage Application Using LLC Resonant Converter

Energies, 2023
The inductor–inductor–capacitor (LLC) resonant converter is a suitable topology for wide output voltage and load range applications with limited circuit parameters.
Umut Ondin, Abdulkadir Balikci
doaj   +1 more source

Chiral Phase Change Nanomaterials

Advanced Functional Materials, EarlyView.
This work demonstrates reversible, non‐volatile phase transitions in chiral Ge2${\rm Ge}_2$Sb2${\rm Sb}_2$Te5${\rm Te}_5$ (GST) nanohelices for high‐speed optical modulation of chirality and dynamic control of the state of polarization (SOP). The chiral nanostructures are fabricated using a highly directional, wafer‐scale physical vapor deposition ...
Joshua A. Burrow, Md Shah Alam, Riad Yahiaoui, Evan M. Smith, Ryan Laing, Jules Gardener, Thomas A. Searles, Piyush J. Shah, Shivashankar Vangala, Joshua R. Hendrickson, Andrew M. Sarangan, Imad Agha   +11 more
wiley   +1 more source

Study on Total Ionizing Dose Effect of Three-dimensional Microsystem Interconnection Structure Based on Through-silicon Via

Yuanzineng kexue jishu
With the development of Moore’s law, through-silicon via (TSV) has emerged as a critical technology for the realization of three-dimensional (3-D) integrated microsystem.
WANG Hao1, 2, , CHEN Rui1, 2, , CHEN Qian1, HAN Jianwei1, 2, YU Xin3, MENG Dechao4, YANG Jiapeng5, XUE Yuxiong6, ZHOU Quanfeng4, HAN Ruilong1, 2
doaj   +1 more source