Results 41 to 50 of about 252,309 (284)
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park +12 more
wiley +1 more source
Reduction of Parasitic Capacitance in Vertical MOSFETs by Spacer Local Oxidation
Application of double gate or surround-gate vertical metal oxide semiconductor field effect transistors (MOSFETs) is hindered by the parasitic overlap capacitance associated with their oayout, which is considerably larger than for a lateral MOSFET on the
Ashburn, Peter +7 more
core +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
With the development of Moore’s law, through-silicon via (TSV) has emerged as a critical technology for the realization of three-dimensional (3-D) integrated microsystem.
WANG Hao1, 2, , CHEN Rui1, 2, , CHEN Qian1, HAN Jianwei1, 2, YU Xin3, MENG Dechao4, YANG Jiapeng5, XUE Yuxiong6, ZHOU Quanfeng4, HAN Ruilong1, 2
doaj +1 more source
This paper present the evaluation performance of single-phase grid connected transformerless inverter according to the level of leakage ground current.
JUNAIDI BIDIN +4 more
doaj
A Transformer Design for High-Voltage Application Using LLC Resonant Converter
The inductor–inductor–capacitor (LLC) resonant converter is a suitable topology for wide output voltage and load range applications with limited circuit parameters.
Umut Ondin, Abdulkadir Balikci
doaj +1 more source
Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics
Gate capacitance of metal-oxide-semiconductor devices with ultra-thin high-K gate-dielectric materials is calculated taking into account the penetration of wave functions into the gate-dielectric.
Haque, A., Hakim, M.M.A.
core +1 more source
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan +4 more
wiley +1 more source
To enhance the power density of LLC resonant converters, multilayer planar inductors are required. However, multilayer planar inductors have high parasitic capacitance, which may cause inductor current ringing in LLC resonant converters, leading to EMI ...
Qichen Liu, Zhengquan Zhang
doaj +1 more source
Influence of carbonaceous electrodes on capacitance and breakdown voltage for hybrid capacitor [PDF]
This paper presents a new type of capacitor and deals with a hybrid approach where the advantages of two systems, dielectric capacitors and the ultracapacitor are combined.
Flahaut, Emmanuel +5 more
core +1 more source

