Results 31 to 40 of about 46,398 (294)

Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components

open access: yesPhotonics, 2023
This paper presents an investigation into the parasitic capacitance of an RF contact scheme for lumped-element EAMs. Test structures are fabricated to analyse this parasitic capacitance via S11 characterisation using a vector network analyser (VNA ...
Jack Mulcahy   +3 more
doaj   +1 more source

Comparative analysis of VDMOS/LDMOS power transistors for RF amplifiers [PDF]

open access: yes, 2009
A comparison between the RF performance of vertical and lateral power MOSFETs is presented. The role of each parasitic parameter in the assessment of the power gain, 1-dB compression point, efficiency, stability, and output matching is evaluated ...
Chevaux, N., De Souza, M.M.
core   +1 more source

Resonant-tunneling-diode terahertz oscillator with a cylindrical cavity for high-frequency oscillation

open access: yesAIP Advances, 2019
We proposed and fabricated resonant-tunneling-diode (RTD) terahertz oscillators integrated with a cylindrical cavity. Oscillation frequency of 3 THz is expected from theoretical analysis.
Ryunosuke Izumi   +3 more
doaj   +1 more source

Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors

open access: yes, 2017
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply ...
Alam, Muhammad A.   +10 more
core   +1 more source

A practical approach for magnetic core-loss characterization [PDF]

open access: yes, 1995
A practical approach for magnetic core-loss characterization up to a few megahertz is presented. An error analysis is for the first time performed, revealing that corrections are needed to compensate for errors introduced by the extra phase shift ...
Tan, F. Dong   +2 more
core   +1 more source

Design and standalone characterisation of a capacitively coupled HV-CMOS sensor chip for the CLIC vertex detector [PDF]

open access: yes, 2017
The concept of capacitive coupling between sensors and readout chips is under study for the vertex detector at the proposed high-energy CLIC electron positron collider. The CLICpix Capacitively Coupled Pixel Detector (C3PD) is an active High-Voltage CMOS
Ballabriga, R.   +7 more
core   +3 more sources

Fast and Accurate Machine Learning Compact Models for Interconnect Parasitic Capacitances Considering Systematic Process Variations

open access: yesIEEE Access, 2022
A novel modeling methodology is developed for interconnect parasitic capacitances in rule-based extraction tools. Traditional rule-based extraction tools rely on pattern matching operations to match every interconnect structure with corresponding pre ...
Mohamed Saleh Abouelyazid   +2 more
doaj   +1 more source

Characterization of a planar microcoil for implantable microsystems [PDF]

open access: yes, 1997
This paper discusses the modelling, design and characterization of planar microcoils to be used in telemetry systems that supply energy to miniaturized implants. Parasitic electrical effects that may become important at a.c.
Elwenspoek, M.C.   +4 more
core   +3 more sources

MnI‐Functionalized Covalent Organic Framework as Efficient Electrocatalyst for CO2 Reduction in a Catholyte‐Free Zero‐Gap Electrolyzer

open access: yesAdvanced Functional Materials, EarlyView.
This work demonstrates the successful integration of a phenanthroline‐based 2D COF with MnI catalytic sites into a catholyte‐free membrane‐electrode‐assembly cell for CO2 electroreduction. The crystalline COF actively suppresses Mn⁰–Mn⁰ dimerization, achieving a turnover frequency of 617 h⁻¹ at 2.8 V (full‐cell potential), and enabling stable operation.
Laura Spies   +8 more
wiley   +1 more source

The Correct Equation for the Current Through Voltage-Dependent Capacitors

open access: yesIEEE Access, 2020
Two different equations for the current through voltage-dependent capacitances are used in the literature. One equation is obtained from the time derivative of charge that is considered as capacitance-voltage product: dQ/dt = d[C(V )V ]/dt = C(V)[dV /dt]
Utkarsh Jadli   +5 more
doaj   +1 more source

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