Results 11 to 20 of about 6,715 (258)

Optimal design of kelvin source SiC MOSFET based PFC considering inductor parasitic capacitance and source mutual inductance

Energy Reports, 2022
SiC MOSFET with Kelvin source has the advantage of high switching speed due to the lack of common source parasitic inductance. However, the high switching speed will make the parasitic parameters affect the performance of PFC converter obviously.
Haihong Qin, Xiang Liu, Xiang Han, Sixuan Xie, Baigen Xu, Ziyue Zhu   +5 more
doaj   +1 more source

PLL-based nanoresonator driving IC with automatic parasitic capacitance cancellation and automatic gain control

Measurement + Control, 2022
This paper presents a phase-locked loop (PLL) based resonator driving integrated circuit (IC) with automatic parasitic capacitance cancellation and automatic gain control.
Hyunwoo Heo, Hyungseup Kim, Donggeun You, Yongsu Kwon, Yil-suk Yang, Junghoon Lee, Hyoungho Ko   +6 more
doaj   +1 more source

Wideband Mobile Antenna Design Using a Resonant Feeding Structure [PDF]

Journal of Electromagnetic Engineering and Science, 2022
Parallel loop feed structures can be used to implement wideband impedance. However, when a parallel loop feed structure is employed, parasitic resonance occurs in certain feed structures, resulting in the degradation of radiation efficiency.
Hyunwoong Shin, Hyeongdong Kim
doaj   +1 more source

Parasitic Effects on Electrical Bioimpedance Systems: Critical Review

Sensors, 2022
Parasitic capacitance represents the main error source in measurement systems based on electrical impedance spectroscopy. The capacitive nature of electrodes’ impedance in tetrapolar configuration can give origin to phase errors when electrodes are ...
David William Cordeiro Marcôndes, Aleksander Sade Paterno, Pedro Bertemes-Filho   +2 more
doaj   +1 more source

Modeling and Suppression of the Crosstalk Issue Considering the Influence of the Parasitic Parameters of SiC MOSFETs

IEEE Access, 2022
Due to the extremely fast switching speed of the SiC MOSFET, its crosstalk issue is more serious than that of the Si IGBT. Therefore, in order to ensure the reliability of the SiC MOSFET converters, the crosstalk problem must be solved firstly.
Xiaoli Guo, Dian Wu, Lei Zhang, Xibo Yuan, Xinsong Zhang, Shugen Bai, Jian Zhong   +6 more
doaj   +1 more source

Weak Capacitance Detection Circuit of Micro-Hemispherical Gyroscope Based on Common-Mode Feedback Fusion Modulation and Demodulation

Micromachines, 2023
As an effective capacitance signal produced by a micro-hemisphere gyro is usually below the pF level, and the capacitance reading process is susceptible to parasitic capacitance and environmental noise, it is highly difficult to acquire an effective ...
Xiaoyang Zhang, Pinghua Li, Xuye Zhuang, Yunlong Sheng, Jinghao Liu, Zhongfeng Gao, Zhiyu Yu   +6 more
doaj   +1 more source

Sequential Switching Shunt Regulator Parallel Power Processing Control for High Capacitance Solar Arrays

Energies, 2021
This paper presents a new control strategy for reducing the switching losses produced by the use of high parasitic capacitance solar arrays in the sequential switching shunt regulator. Instead of dividing the solar array into equal sections, the proposed
José M. Blanes, José A. Carrasco, Ausiàs Garrigós, David Marroquí, Cristian Torres   +4 more
doaj   +1 more source

Parasitic Capacitance Analysis of Three-Independent-Gate Field-Effect Transistors

IEEE Journal of the Electron Devices Society, 2021
Three-Independent-Gate Field-Effect Transistors (TIGFETs) are a promising alternative technology that aims to replace or complement CMOS at advanced technology nodes.
Patsy Cadareanu, Jorge Romero-Gonzalez, Pierre-Emmanuel Gaillardon   +2 more
doaj   +1 more source

High-Frequency Planar Transformer Based on Interleaved Serpentine Winding Method With Low Parasitic Capacitance for High-Current Input LLC Resonant Converter

IEEE Access, 2023
An LLC resonant converter should have high efficiency and power density. Further, it is important to reduce the volume and loss of the transformer, which provides insulation and voltage conversion between the input and output.
Su-Seong Park, Myeong-Seok Jeon, Sung-Soo Min, Rae-Young Kim   +3 more
doaj   +1 more source

Improved Performance of CMOS Terahertz Detectors by Reducing MOSFET Parasitic Capacitance

IEEE Access, 2019
The parasitic circuit elements significantly affect rectification performance of metal-oxide-semiconductor field-effect transistor devices. In this paper, we develop a gate-source parasitic capacitance reduction technique by shifting the source lightly ...
Qixuan Yang, Xiaoli Ji, Yue Xu, Feng Yan
doaj   +1 more source