Results 21 to 30 of about 252,309 (284)
IEEE Access, 2022 Due to the extremely fast switching speed of the SiC MOSFET, its crosstalk issue is more serious than that of the Si IGBT. Therefore, in order to ensure the reliability of the SiC MOSFET converters, the crosstalk problem must be solved firstly.
Xiaoli Guo +6 more
doaj +1 more source
Energies, 2021 This paper presents a new control strategy for reducing the switching losses produced by the use of high parasitic capacitance solar arrays in the sequential switching shunt regulator. Instead of dividing the solar array into equal sections, the proposed
José M. Blanes +4 more
doaj +1 more source
Parasitic Capacitance Analysis of Three-Independent-Gate Field-Effect Transistors
IEEE Journal of the Electron Devices Society, 2021 Three-Independent-Gate Field-Effect Transistors (TIGFETs) are a promising alternative technology that aims to replace or complement CMOS at advanced technology nodes.
Patsy Cadareanu +2 more
doaj +1 more source
IEEE Access, 2023 An LLC resonant converter should have high efficiency and power density. Further, it is important to reduce the volume and loss of the transformer, which provides insulation and voltage conversion between the input and output.
Su-Seong Park +3 more
doaj +1 more source
Improved Performance of CMOS Terahertz Detectors by Reducing MOSFET Parasitic Capacitance
IEEE Access, 2019 The parasitic circuit elements significantly affect rectification performance of metal-oxide-semiconductor field-effect transistor devices. In this paper, we develop a gate-source parasitic capacitance reduction technique by shifting the source lightly ...
Qixuan Yang, Xiaoli Ji, Yue Xu, Feng Yan
doaj +1 more source
Semi-analytical calculation method for parasitic capacitance of high-frequency transformers based on partitioned solution [PDF]
AIP AdvancesThe parasitic capacitance of the windings significantly affects the transmission characteristics of high-frequency transformers, and its accurate calculation is crucial for the optimal design of transformers.
Yongjian Li +5 more
doaj +1 more source
Rethinking Basic Assumptions for Modeling Parasitic Capacitance in Inductors
, 2021 This paper rethinks the basic assumptions often used in analytically modeling parasitic capacitance in inductors. These assumptions are classified in two commonly-used physics-based analysis methods: the lumped capacitor network method and the energy ...
zhan shen (11850527) +8 more
core +1 more source
Measurement of relative permittivity of LTCC ceramic at different temperatures
AIP Advances, 2014 Devices based on LTCC (low-temperature co-fired ceramic) technology are more widely applied in high temperature environments, and the temperature-dependent properties of the LTCC material play an important role in measurements of the characteristics of ...
Qiulin Tan +8 more
doaj +1 more source
Design Guidelines to Reduce Parasitic Capacitance in Planar Inductors
, 2023 Reduction of parasitic capacitance is essential for planar magnetics, like planar inductors, in high frequency applications to reduce displacement currents and capacitive losses.
Schupp, Jan +6 more
core +1 more source
AIP Advances, 2019 We proposed and fabricated resonant-tunneling-diode (RTD) terahertz oscillators integrated with a cylindrical cavity. Oscillation frequency of 3 THz is expected from theoretical analysis.
Ryunosuke Izumi +3 more
doaj +1 more source