Results 21 to 30 of about 10,280 (293)
Parasitic Effects on Electrical Bioimpedance Systems: Critical Review
Sensors, 2022 Parasitic capacitance represents the main error source in measurement systems based on electrical impedance spectroscopy. The capacitive nature of electrodes’ impedance in tetrapolar configuration can give origin to phase errors when electrodes are ...
David William Cordeiro Marcôndes +2 more
doaj +1 more source
IEEE Access, 2022 Due to the extremely fast switching speed of the SiC MOSFET, its crosstalk issue is more serious than that of the Si IGBT. Therefore, in order to ensure the reliability of the SiC MOSFET converters, the crosstalk problem must be solved firstly.
Xiaoli Guo +6 more
doaj +1 more source
Micromachines, 2023 As an effective capacitance signal produced by a micro-hemisphere gyro is usually below the pF level, and the capacitance reading process is susceptible to parasitic capacitance and environmental noise, it is highly difficult to acquire an effective ...
Xiaoyang Zhang +6 more
doaj +1 more source
Energies, 2021 This paper presents a new control strategy for reducing the switching losses produced by the use of high parasitic capacitance solar arrays in the sequential switching shunt regulator. Instead of dividing the solar array into equal sections, the proposed
José M. Blanes +4 more
doaj +1 more source
Low parasitic capacitance gate driver with desaturation protection [PDF]
, 2020 This paper presents an IGBT gate driver with low parasitic capacitance between gate collector and low capacitance across the insulation. It shows the advantages of the proposed gate driver which are mainly the single supply with less parasitic ...
Van den Bossche, Alex +3 more
core +1 more source
Influence Analysis of SiC MOSFET’s Parasitic Capacitance on DAB Converter Output [PDF]
, 2022 This paper proposes the influence analysis of silicon carbide (SiC) MOSFET’s parasitic output capacitance on a dual active bridge (DAB) converter. Power converters are required for DC grids and energy storage.
Cheol-Woong Choi +3 more
core +1 more source
Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance [PDF]
, 2004 The vertical MOSFET structure is one of the solutions for reducing the channel length of transistors under 50nm. Surround gates can be easily realised in vertical MOSFETs which offer increased channel width per unit silicon area.
Wang, Y +17 more
core +1 more source
Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics [PDF]
, 2018 Low-parasitic-capacitance 4H-SiC nMOSFETs using a novel self-aligned process were demonstrated. In these nMOSFETs, device characteristics including parasitic capacitance (gate-source, gate-drain, drain-source capacitance) were investigated.
Kurose, T. +21 more
core +3 more sources
Parasitic Capacitance Analysis of Three-Independent-Gate Field-Effect Transistors
IEEE Journal of the Electron Devices Society, 2021 Three-Independent-Gate Field-Effect Transistors (TIGFETs) are a promising alternative technology that aims to replace or complement CMOS at advanced technology nodes.
Patsy Cadareanu +2 more
doaj +1 more source
Vertical MOSFETs for high performance, low cost CMOS [PDF]
, 2007 -We present a review of recent reports on vertical MOSFETs which includes a summary of our own research in this area. Such devices can offer a decananometer channel length in a relaxed lithography. Furthermore, the footprint is substantially smaller than
Tan, L. +13 more
core +1 more source