Results 21 to 30 of about 6,715 (258)

Semi-analytical calculation method for parasitic capacitance of high-frequency transformers based on partitioned solution [PDF]

AIP Advances
The parasitic capacitance of the windings significantly affects the transmission characteristics of high-frequency transformers, and its accurate calculation is crucial for the optimal design of transformers.
Yongjian Li, Jinghao Liu, Zhenyu Wan, Shuaichao Yue, Zhenghua Cao, Bin Chen   +5 more
doaj   +1 more source

Measurement of relative permittivity of LTCC ceramic at different temperatures

AIP Advances, 2014
Devices based on LTCC (low-temperature co-fired ceramic) technology are more widely applied in high temperature environments, and the temperature-dependent properties of the LTCC material play an important role in measurements of the characteristics of ...
Qiulin Tan, Hao Kang, Li Qin, Jijun Xiong, Zhaoying Zhou, Wendong Zhang, Tao Luo, Chenyang Xue, Jun Liu   +8 more
doaj   +1 more source

Minimisation of Parasitic Capacitance in Lumped-Element Electro-Absorption Modulators for High-Speed Optical Components

Photonics, 2023
This paper presents an investigation into the parasitic capacitance of an RF contact scheme for lumped-element EAMs. Test structures are fabricated to analyse this parasitic capacitance via S11 characterisation using a vector network analyser (VNA ...
Jack Mulcahy, Shengtai Shi, Frank H. Peters, Xing Dai   +3 more
doaj   +1 more source

Resonant-tunneling-diode terahertz oscillator with a cylindrical cavity for high-frequency oscillation

AIP Advances, 2019
We proposed and fabricated resonant-tunneling-diode (RTD) terahertz oscillators integrated with a cylindrical cavity. Oscillation frequency of 3 THz is expected from theoretical analysis.
Ryunosuke Izumi, Takumi Sato, Safumi Suzuki, Masahiro Asada   +3 more
doaj   +1 more source

Fast and Accurate Machine Learning Compact Models for Interconnect Parasitic Capacitances Considering Systematic Process Variations

IEEE Access, 2022
A novel modeling methodology is developed for interconnect parasitic capacitances in rule-based extraction tools. Traditional rule-based extraction tools rely on pattern matching operations to match every interconnect structure with corresponding pre ...
Mohamed Saleh Abouelyazid, Sherif Hammouda, Yehea Ismail   +2 more
doaj   +1 more source

Composites of Shellac and Silver Nanowires as Flexible, Biobased, and Corrosion‐Resistant Transparent Conductive Electrodes

Advanced Functional Materials, EarlyView.
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein, Tiago Carneiro Gomes, Eliza Ng, Simon Rondeau‐Gagné, Tricia Breen Carmichael   +4 more
wiley   +1 more source

The Correct Equation for the Current Through Voltage-Dependent Capacitors

IEEE Access, 2020
Two different equations for the current through voltage-dependent capacitances are used in the literature. One equation is obtained from the time derivative of charge that is considered as capacitance-voltage product: dQ/dt = d[C(V )V ]/dt = C(V)[dV /dt]
Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Jordan R. Nicholls, Peyush Pande, Sima Dimitrijev   +5 more
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

Effect of Parasitic Capacitance on GMI Magnetic Sensor Performance [PDF]

Key Engineering Materials, 2013
Magnetic sensors based on GMI devices are the subject of intensive research, as they appear promising for magnetometry applications. Performances of GMI magnetometers are often limited by the noise of the electronic setup. Thus, the present challenge is to increase the GMI device sensitivity (expressed in V/T) in order to decrease the equivalent ...
Saez, Sébastien, Dufay, Basile, Dolabdjian, Christophe, Yelon, A., Menard, D.   +4 more
openaire   +3 more sources