Results 111 to 120 of about 2,141 (267)

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

Advanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon, Moonseek Jeong, Su In Hwang, Geun Hyeong Park, Joonyong Kim, Hyojun Choi, Hyeong Seok Choi, Da Hyun Kim, Dong Hee Han, Ju Yong Park, Seungho Baek, Jung Ho Yoon, Dong Hyun Lee, Min Hyuk Park   +13 more
wiley   +1 more source

Analysis of vertical AND flash memory for energy-efficient, scalable, fast CIM beyond vertical NAND flash memory. [PDF]

Nano Converg
Ko J, Im J, Park SH, Gu J, Cho J, Hwang J, Koo RH, Kim J, Woo SY, Lee JH.   +9 more
europepmc   +1 more source

Pyrazole‐Derived Antibacterial Compounds Effectively Treat Methicillin‐Resistant Staphylococcus Aureus Infections by Inhibiting Aspartate Transcarbamoylase

Advanced Science, EarlyView.
This study unveils a novel antibacterial mechanism against MRSA, in which the compound Py‐27 selectively targets and inhibits aspartate transcarbamoylase (ATCase), a key enzyme in pyrimidine synthesis. This inhibition disrupts DNA replication, induces oxidative damage, leading to potent bactericidal activity.
Xiaorong Yang, Xinyuan Cao, Lixia Dai, Feng Yang, Jing Wang, Yudong Ma, Tong Bu, Zile Gong, Xueyan Liu, Changcai Bai, Xiaolou Miao, Xiaofei Shang   +11 more
wiley   +1 more source

Low-loss SAW RFID using the reflective multistrip coupler as reflectors. [PDF]

Microsyst Nanoeng
Cao J, He T, Zhang G, Fu Q, Liu H, Reindl L, Luo W.   +6 more
europepmc   +1 more source

Chlorine‐Functionalized Silane‐Modified Copper Electrocatalyst for Enhanced CO2 Reduction to Multi‐Carbon Products

Advanced Science, EarlyView.
A chlorine‐functionalized silane modifier (CPTMS) is introduced to cooperatively regulate CO2 reduction to C2+ products on Cu‐based catalysts. Dual‐functional interface sequentially enhances CO2 activation, intermediates protonation and C─C coupling, delivering a 5‐fold increase in C2+ faradaic efficiency (FE, 75% vs.
Ying Ying Ch'ng, Sankhadip Saha, Ming Zhang, Shujie Zhou, Lixue Jiang, Putri Ramadhany, Jitraporn Vongsvivut, Adrian Cernescu, Priyank Vijaya Kumar, Yihao Shan, Zhipeng Ma, Xiaoxuan Luo, Rahman Daiyan, Zhaojun Han, Rose Amal   +14 more
wiley   +1 more source

An Improved Nonlinear Capacitance Model for GaN HEMTs Based on the Angelov Model. [PDF]

Micromachines (Basel)
Miao Y, Yuan Q, Wang C, Cheng J.
europepmc   +1 more source

Dynamic Interfacial pH Stabilization and (002) Oriented Deposition Enabled by Histidine‐Induced Solid Electrolyte Interphase for Highly Reversible Zn Anodes

Advanced Science, EarlyView.
The histidine‐induced ultrathin SEI (Zn(OH)2‐HIS) delivers exceptional anode stability by stabilizing the interfacial pH via a synergistic mechanism of chemical buffering and physical blocking, while inducing dendrite‐free oriented (002) deposition.
Qi Liu, Yimin Chen, Jianwei Lu, Xiangqun Zhuge, Xiyuan Zhong, Huaichong Sun, Yibing Li, Zhihong Luo, Kun Luo, Weiwei Lei, Dan Liu, Anjun Hu, Aijing Ma   +12 more
wiley   +1 more source

Design of a SiC MOSFET Gate Driver Chip Based on Adaptive Active Drive Technology. [PDF]

Micromachines (Basel)
Li Q, Zhang Y, Huang B, Zhang W, Chen C, Lei J, Zhang D, Min R, Tong Q.   +8 more
europepmc   +1 more source

From Devices to Systems: Integration Strategies for Micro‐Supercapacitors in Microsystems

Advanced Science, EarlyView.
Micro‐supercapacitors are evolving from device‐level energy storage toward system‐level functional units in integrated microsystems. This Review presents a system‐oriented design framework in which integration serves as the key link between application requirements, system constraints, device architectures, and material selection. Monolithic and hybrid
Zhuohao Liu, Gang Li, Kaiying Wang
wiley   +1 more source

Selective Polarity Control of Metal Oxide Semiconductors for Complementary Logic Gates

Advanced Science, EarlyView.
A scalable electrochemical doping strategy enables in situ p‐to‐n polarity conversion in tin oxide (SnO) thin films using electrolyte gating. Both the pristine p‐type SnO transistor and the electrochemically converted n‐type SnO2 transistor exhibited noticeable and stable electrical performance.
Dong Hyun Park, Seung Ho Ryu, Min Su Kim, Taek‐Mo Chung, Seong Keun Kim, In‐Hwan Baek, Keun Hyung Lee   +6 more
wiley   +1 more source