Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter +7 more
wiley +1 more source
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
wiley +1 more source
Analyzing and reducing common mode noise in high power inductive power transfer systems for electric vehicles using precise balance technique. [PDF]
Mei Y, Weng W, Wu J, Xu H, He X, Wang Y.
europepmc +1 more source
Aging and Electrical Stability of DNTT Honey‐Gated OFETs
DNTT honey‐gated organic transistors were fabricated and evaluated to assess short‐ and long‐term stability under electrical stress and aging. Short‐term transfer measurements (five days, 40 sweeps/day) showed minimal parameter shift, while extended measurements revealed gradual degradation over weeks.
Douglas H. Vieira +8 more
wiley +1 more source
Low-loss SAW RFID using the reflective multistrip coupler as reflectors. [PDF]
Cao J +6 more
europepmc +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
An Improved Nonlinear Capacitance Model for GaN HEMTs Based on the Angelov Model. [PDF]
Miao Y, Yuan Q, Wang C, Cheng J.
europepmc +1 more source
Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol +7 more
wiley +1 more source
For self‐aligned top‐gate amorphous InGaZnO thin‐film transistors (TFTs), a capacitance‐voltage‐based extraction technique that directly reconstructs a lateral doping profile and key parameters is proposed. The extracted profiles are validated by direct comparison with the transfer‐length method.
Seung Joo Myoung +16 more
wiley +1 more source
Inductive Displacement Sensor Operating in an LC Oscillator System Under High Pressure Conditions-Basic Design Principles. [PDF]
Nurkowski J, Nowakowski A.
europepmc +1 more source

