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Ge Epitaxial Refill Deposition Techniques for Fabricating Pedestal Transistor Structures
IBM Journal of Research and Development, 1972An etch-epitaxial refill technique is described for the fabrication of integrated high-speed Ge transistor structures having a pedestal configuration. The device areas surrounding 0.1 ohm-cm mesa structures were refilled with Ge having a resistivity range of 1 to 10 ohm-cm, providing low parasitic capacitance in the passive area of the base-collector ...
V. J. Silvestri +3 more
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The Structure Optimization of Pedestal for Lightweight
Mechanical Engineering and Technology, 2018openaire +1 more source
2017
A dimensionless collisionality scan in low-triangularity plasmas in the Joint European Torus with the ITER-like wall (JET-ILW) has been performed. The increase of the normalized energy confinement (defined as the ratio between thermal energy confinement and Bohm confinement time) with decreasing collisionality is observed.
Frassinetti, L. +17 more
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A dimensionless collisionality scan in low-triangularity plasmas in the Joint European Torus with the ITER-like wall (JET-ILW) has been performed. The increase of the normalized energy confinement (defined as the ratio between thermal energy confinement and Bohm confinement time) with decreasing collisionality is observed.
Frassinetti, L. +17 more
openaire +1 more source
Sandpiles with Bistable Automata Rules: Towards a Minimal Model of Pedestal Formation and Structure
Physical Review Letters, 2002Patrick H Diamond
exaly