Results 211 to 220 of about 25,986 (305)

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS2 Memory Transistor

Advanced Science, EarlyView.
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Yeonsu Jeong, Honglei Wang, Pietro Tordi, Ying Chieh Hu, Adrián Tamayo, Bing Wu, Hyun Soo Ahn, Zdenek Sofer, Jong Hoon Jung, Massimo Bonini, Paolo Samorì   +10 more
wiley   +1 more source

Fundamental Challenges, Physical Implementations, and Integration Strategies for Ising Machines in Large‐Scale Optimization Tasks

Advanced Electronic Materials, EarlyView.
Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley   +1 more source

Low noise sensorless control of a YASA AFFSPM motor using ADRC and improved PLL. [PDF]

Sci Rep
Rahmani-Fard J, Mohammed MJ.
europepmc   +1 more source

Exceptional Antimodes in Multi‐Drive Cavity Magnonics

Advanced Electronic Materials, EarlyView.
Driven‐dissipative cavity‐magnonics provides a flexible platform for engineering non‐Hermitian physics such as exceptional points. Here, using a four‐port, three‐mode system with controllable microwave interference, antimodes and coherent perfect extinction (CPE) are realized, enabling active tuning to antimode exceptional points.
Mawgan A. Smith, Ryan D. McKenzie, Alban Joseph, Robert L. Stamps, Rair Macêdo   +4 more
wiley   +1 more source

Protein loops are major contributors to DNA strand separation and high-fidelity substrate recognition for DNA methyltransferase CcrM. [PDF]

J Biol Chem
Konttinen O, Dangerfield T, Vargas J, Johnson KA, Reich N.   +4 more
europepmc   +1 more source

Nonlinear Transverse Transport in a Ferromagnetic Polar Metal

Advanced Electronic Materials, EarlyView.
This work reports the observation of a nonlinear transverse response in ferromagnetic polar SrRuO3(111) thin films. The nonlinear signal exhibits a sharp enhancement across the magnetic phase transition. Through detailed scaling and theoretical analysis, the authors attribute this behavior to a sign reversal of the Berry curvature triple, establishing ...
Xuyang Sha, Xuejin Zhang, Hao Liu, Jin Cao, Ruohan Chen, Jinfeng Zhai, Dingfu Shao, Shiwei Wu, Zhen Wang, Cong Xiao, Shengyuan A. Yang, Pan He, Hangwen Guo, Jian Shen   +13 more
wiley   +1 more source

Structural basis for sarbecovirus Rc-o319 spike adaptation to Rhinolophus cornutus Bat ACE2 and constraints on switching to human ACE2. [PDF]

PLoS Pathog
Wang J, Li Z, Ma Y, Li Z, Yuan H, Niu C, Teng Y, Liu B, Li M, Zhou M, Liu W, Feng H, Chen J, He J, Chen X, Xiong X.   +15 more
europepmc   +1 more source

Aluminum‐Substituted Yttrium Iron Garnet Films With Perpendicular Anisotropy Grown on Silicon by Sputtering

Advanced Electronic Materials, EarlyView.
Ultrathin Al‐substituted YIG films with perpendicular magnetic anisotropy are sputter‐grown directly on Si/SiOx using an ultrathin AlOx buffer layer. Al diffusion reduces the saturation magnetization and stabilizes PMA via magnetoelastic effects. Pt/Al:YIG bilayers exhibit strong spin Hall magnetoresistance and efficient spin–orbit torque switching ...
Matteo Fettizio, Stefano Fedel, Saúl Estandía, Jesus Alejandro De Sousa, Can Onur Avci   +4 more
wiley   +1 more source

Design and implementation of a phasor measurement unit using a new measurement technique. [PDF]

Sci Rep
Mohamed SA, Mageed HMA, Arafa OM, Merzban MH, Eteiba MB, Haiba AS.   +5 more
europepmc   +1 more source

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

Advanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram, Cédric Marchand, Shehr Bano Masood, Aymen Mahmoudi, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Ian O'Connor, Alexei Gruverman, Jean‐François Dayen   +10 more
wiley   +1 more source