Results 181 to 190 of about 25,904 (258)

Editor's Choice Articles in the Electronic Materials Section of <i>Materials</i> in 2025. [PDF]

Materials (Basel)
Roccaforte F.
europepmc   +1 more source

Data‐Driven Materials Science for Energy‐Sustainable Applications

Advanced Materials, EarlyView.
Data‐driven approaches powered by artificial intelligence are transforming materials discovery for energy sustainability. This review examines how auto‐generated high‐quality materials databases and domain‐specific language models accelerate research in photovoltaics, thermoelectrics, batteries and magnetic materials. Applications involve extraction of
Jacqueline M. Cole
wiley   +1 more source

Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS₂ Field Effect Transistors. [PDF]

Adv Mater
Liu L, Yan H, Loh L, Paul KK, Sarkar S, Biswas D, Lee TL, Taniguchi T, Watanabe K, Chhowalla M, Wang Y.   +10 more
europepmc   +1 more source

Noise‐Tunable Memristor Enabling Programmable Probabilistic Neurons for Frequency‐Selective Time‐Series Signal Encoding

Advanced Materials, EarlyView.
Memristors offer tunable resistance and intrinsic instability, making them promising tunable noise sources. We propose a spiking‐rate‐programmable probabilistic neuron using a Ru/TaOx/Pt memristor, where resistance‐dependent noise enables frequency‐selective encoding.
Do Hoon Kim, Seoeun Jang, Hakseung Rhee, Min Gu Lee, Daehee Kim, Taewook Go, Woon Hyung Cheong, Hanchan Song, Kyung Min Kim   +8 more
wiley   +1 more source

Optimizing a dynamic infrared emitter by tailoring titanium carbide MXene surface chemistry. [PDF]

Sci Rep
Daliran N, Oveisi AR, Wang Z.
europepmc   +1 more source

Direct Growth of 2D Bilayers on Au(111) for Low‐Coercive Sliding Ferroelectricity

Advanced Materials, EarlyView.
Controlled CVD growth of stacking‐defined bilayer ReS2 on Au(111) enables parallel‐stacked bilayers with intrinsic sliding ferroelectricity, a strong piezoelectric response, and an ultralow coercive voltage. Atomic‐resolution imaging and in situ measurements further reveal the decisive role of clean interfaces in achieving low‐barrier ferroelectric ...
Honglin Chen, Ke Yang, Yuhuan Li, Lingli Huang, Tianren Chen, Ming Yang, Jiong Zhao, Thuc Hue Ly   +7 more
wiley   +1 more source

A Rapid-prototyping CMOS-RRAM Integration Strategy. [PDF]

Microsyst Nanoeng
Tsiamis A, Stathopoulos S, Prodromakis T.   +2 more
europepmc   +1 more source

Adsorption‐Engineered Hydrocarbon Ionomers for Durable Proton‐Exchange Membrane Fuel Cells

Advanced Materials, EarlyView.
Hydrocarbon ionomers suffer from oxidation‐driven interfacial degradation in PEM fuel cell cathodes, leading to catalyst instability. Here, adsorption‐engineered poly(fluorene) ionomers decouple interfacial anchoring from oxidative degradation, enabling strong catalyst–ionomer interactions while resisting electrochemical oxidation.
Heemin Park, Kate Chen, Su Min Ahn, Hengquan Guo, Cy Fujimoto, Jong‐Ho Choi, Lynda Amichi, Danah Kim, Seung Geol Lee, Xiaojing Wang, Jacob S. Spendelow, Sun Young Kang, Panagiotis Bexis, Eun Joo S. Park, Yu Seung Kim   +14 more
wiley   +1 more source

Application of Machine Learning in Predicting the Properties of Two-Dimensional Semiconductor Materials. [PDF]

Nanomaterials (Basel)
Yang J, Tang L, Wang Y, Wen J, Chen W.
europepmc   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source