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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362), 2003
High commercial interest in WDM and optical networking places strong emphasis on increased functionality from semiconductor optoelectronics technologies. This talk will examine the performance and cost issues of hybrid and monolithic integration technologies with examples drawn from current international research efforts.
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High commercial interest in WDM and optical networking places strong emphasis on increased functionality from semiconductor optoelectronics technologies. This talk will examine the performance and cost issues of hybrid and monolithic integration technologies with examples drawn from current international research efforts.
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1996
Publisher Summary This chapter focuses on phase diagrams of R–P systems, the crystal structures of all known binary phosphides, their chemical properties, and methods of preparation. The chapter provides information on ternary rare-earth phosphides and presents the systematized data on physical properties and the valence state of lanthanoid atoms ...
Yurij Kuz'ma, Stepan Chykhrij
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Publisher Summary This chapter focuses on phase diagrams of R–P systems, the crystal structures of all known binary phosphides, their chemical properties, and methods of preparation. The chapter provides information on ternary rare-earth phosphides and presents the systematized data on physical properties and the valence state of lanthanoid atoms ...
Yurij Kuz'ma, Stepan Chykhrij
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Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
Nature, 2001X. Duan +4 more
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Angewandte Chemie International Edition in English, 1963
H. Schumann, H. Köpf, Max Schmidt
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H. Schumann, H. Köpf, Max Schmidt
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1999
Gallium phosphide (GaP) is commercially one of the most important III–V semiconductors because of its application to electroluminescent devices. GaP is an indirect-band-gap semiconductor possessing the zinc-blende structure. A wide variety of theoretical and experimental works have given detailed information about the phySiCal properties of this ...
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Gallium phosphide (GaP) is commercially one of the most important III–V semiconductors because of its application to electroluminescent devices. GaP is an indirect-band-gap semiconductor possessing the zinc-blende structure. A wide variety of theoretical and experimental works have given detailed information about the phySiCal properties of this ...
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