Results 41 to 50 of about 8,707 (193)

Anisotropic intrinsic lattice thermal conductivity of phosphorene from first principles [PDF]

, 2006
Phosphorene, the single layer counterpart of black phosphorus, is a novel two-dimensional semiconductor with high carrier mobility and a large fundamental direct band gap, which has attracted tremendous interest recently.
Aczel Peter, Backhouse R.C., Bednarczyk Marek A., Blikle Andrzej, Danielsson Nils Anders, Dijkstra Edsger W., Dybjer Peter, Friedman Harvey, Jeremy Gibbons, Jeuring J., John Hughes, Jones Simon Peyton, Meijer E., Nils Anders Danielsson, Patrik Jansson, Priestley Hilary A., Reynolds John C., Turner David   +17 more
core   +2 more sources

Atomistic simulation of the uniaxial tension of black phosphorene nanotubes

Vietnam Journal of Mechanics, 2018
In the present work, the uniaxial tensile tests of 3 pairs black phosphorene nanotubes are simulated by molecular dynamics finite element method with Stillinger-Weber potential. Each pair contains an armchair black phosphorene nanotube and a zigzag one,
Van-Trang Nguyen, Danh-Truong Nguyen, Minh-Quy Le   +2 more
doaj   +1 more source

Band Tuning of Phosphorene Semiconductor via Floquet Theory

, 2019
Graphene and phosphorene are monolayer of graphite and phosphorous, respectively. Graphene is completely relativistic (Dirac) fermionic system, but phosphorene is pseudorelativistic fermionic system. In phosphorene, electronic spectrum of phosphorene has
Almas, Kumar, Upendra, Mishra, Km Arti
core   +1 more source

Atomic and electronic structure of nitrogen- and boron-doped phosphorene

, 2015
First principle modeling of nitrogen- and boron-doped phosphorene demonstrates the tendency toward formation of highly ordered structures. Nitrogen doping leads to the formation of -N-P-P-P-N- lines.
Boukhvalov, Danil W.
core   +1 more source

Dynamic instability of lithiated phosphorene

RSC Advances, 2020
Introduction of C improves transition capacity between intercalation and conversion reactions for multilayer phosphorene.
Lingchun Jia, Hongchun Yuan, Yingli Chang, Mu Gu, Jiajie Zhu   +4 more
openaire   +3 more sources

Electronic and magnetic properties of doped black phosphorene with concentration dependence

Beilstein Journal of Nanotechnology, 2019
In this paper, we employed first-principles calculations and chose Si and S atoms as impurities to explore the concentration-dependence of electronic structure and magnetism of doped phosphorene.
Ke Wang, Hai Wang, Min Zhang, Yan Liu, Wei Zhao   +4 more
doaj   +1 more source

Chemistry of Phosphorene: Synthesis, Functionalization and Biomedical Applications in an Update Review

Inorganics, 2020
The present review aims to highlight the potential of an emerging 2D single element material: phosphorene. Attention is focused on the more recent studies on phosphorene, in terms of synthetic approaches, modification aimed at its stabilization, and ...
Monica Pica, Roberto D’Amato
doaj   +1 more source

Effects of extrinsic point defects in phosphorene: B, C, N, O and F Adatoms

, 2015
Phosphorene is emerging as a promising 2D semiconducting material with a direct band gap and high carrier mobility. In this paper, we examine the role of the extrinsic point defects including surface adatoms in modifying the electronic properties of ...
Karna, Shashi P., Pandey, Ravindra, Wang, Gaoxue   +2 more
core   +1 more source

Modulation of electronic and mechanical properties of phosphorene through strain

, 2015
We report a first-principles study on the elastic, vibrational, and electronic properties of recently synthesized phosphorene. By calculating Gr\"uneisen parameters, we evaluate the frequency shift of Raman/infrared active modes via symmetric biaxial ...
Asgari, Reza, Elahi, Mohammad, Khaliji, Kaveh, Pourfath, Mahdi, Tabatabaei, Seyed Mohammad   +4 more
core   +2 more sources

Electrostatic Gating of Phosphorene Polymorphs. [PDF]

J Phys Chem C Nanomater Interfaces
The ability to directly monitor the states of electrons in modern field-effect transistors (FETs) could transform our understanding of the physics and improve the function of related devices. In particular, phosphorene allotropes present a fertile landscape for the development of high-performance FETs.
Malayee FM, Bagheri R, Nazari F, Illas F.   +3 more
europepmc   +4 more sources