Results 101 to 110 of about 80,275 (275)

Multifunctional solar‐blind ultraviolet photodetectors based on p‐PCDTBT/n‐Ga2O3 heterojunction with high photoresponse

InfoMat
Solar‐blind ultraviolet (UV) photodetectors based on p‐organic/n‐Ga2O3 hybrid heterojunctions have attracted extensive attention recently. Herein, the multifunctional solar‐blind photodetector based on p‐type poly[N‐9′‐heptadecanyl‐2,7‐carbazole‐alt‐5,5‐(
Yifei Wang, Zhenhua Lin, Jingli Ma, Yongyi Wu, Haidong Yuan, Dongsheng Cui, Mengyang Kang, Xing Guo, Jie Su, Jinshui Miao, Zhifeng Shi, Tao Li, Jincheng Zhang, Yue Hao, Jingjing Chang   +14 more
doaj   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Photoelectric Properties of ZnₓCd₁-ₓS-Based Photosensitive Semiconductor Structures with Enhanced Ultraviolet Response

East European Journal of Physics
The work is devoted to the study of the photoelectric characteristics of an Au-ZnxCd1-xS-Mo structured film injection photodetector sensitive in the ultraviolet and visible region of the spectrum of electromagnetic radiation, with maximum sensitivity in ...
R.R. Kabulov, D.B. Istamov, K.T. Suyarov, F.A. Akbarov   +3 more
doaj   +1 more source

In Situ Regenerative Adduct Assisted p‐Type Doping of Organic Semiconductor

Advanced Materials, EarlyView.
An in situ regenerative adduct‐assisted (IRAA) doping strategy is introduced for p‐type doping of organic semiconductors. A regenerating adduct serves as the dopant, enabling highly efficient doping with a choice of counterions. The generality of this approach provides a scalable route to dope a wide range of hole‐transport materials with high thermal ...
Brijesh K. Patel, Arya Vidhan, Shubham Gupta, Vaishali Arunachalam, Simantini Nayak, Neeraj Bhatt, Ravi Shankar Singh, Shaibal K. Sarkar, Pabitra K. Nayak   +8 more
wiley   +1 more source

The digital method of surface reflectance coefficient measurement [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2010
The connection between the reflectance of a surface and the coordinate of picture in a photodetector plane is established. The digital method of measurement of reflectance with application of the multielement photodetector is developed.
Ivanchenko I. A., Santoniy V. I., Smyntyna V. A.   +2 more
doaj  

Exploring the Potential of Zero‐Dimensional Carbon Nanomaterials in Photoluminescent, Electrochemiluminescent and Electrochemical Sensors

Advanced Materials Interfaces, EarlyView.
Zero‐dimensional carbon nanomaterials are presented as multifunctional platforms linking structure, property, and sensing performance. Surface engineering and heteroatom doping modulate electron‐transfer and luminescent behavior, enabling electrochemical, photoluminescent, and electrochemiluminescent detection. Fundamental design principles, analytical
Gustavo Martins, Jeferson Luiz Gogola, Ava Gevaerd, Cristiane Kalinke, Paulo Roberto de Oliveira, Fabio Roberto Caetano, Bruno Campos Janegitz, Márcio Fernando Bergamini, Luiz Humberto Marcolino‐Junior   +8 more
wiley   +1 more source

PN-Type Near-Infrared High-Speed Graphene Heterojunction Photodetector

IEEE Photonics Journal
In this work, a GaAs-substrate-based PN-type near-infrared high-speed graphene heterojunction photodetector is proposed. The proposed photodetector is only composed of a P-type graphene heterojunction absorption part and a N-type GaAs substrate, where ...
Yun Fang, Qingmin Fu, Yuhang Wei, Jian Liu, Wanchun Yang, Dandan Wang, Xue Zhang   +6 more
doaj   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays

Advanced Materials Interfaces
Photodetectors play a crucial role in converting light signals into electrical signals and have significant applications in various fields such as communications, imaging, and sensing. However, the fabrication of a photodetector is a complex process that
Pengxiang Sun, Xun Yang, Kexue Li, Zhipeng Wei, Wei Fan, Shaoyi Wang, Weimin Zhou, Chongxin Shan   +7 more
doaj   +1 more source

Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation

Advanced Materials Interfaces, EarlyView.
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales, Aaron Reupert, Kevin Lubig, Frank A. Müller, Berit Marx‐Glowna, Ralf Röhlsberger, Till Weickhardt, Giancarlo Soavi, Martin Hafermann, Elke Wendler, Carsten Ronning   +10 more
wiley   +1 more source