Results 81 to 90 of about 17,314 (264)

Printed SWCNT‐Based p–n Junction Thin‐Film Near‐Infrared Photoresistors Enabled by a Sustainable Furan‐Derived π‐Conjugated Polymer

Advanced Materials Technologies, EarlyView.
A sustainable polymer–carbon nanotube bilayer enables efficient near‐infrared photodetection in a simple lateral planar p–n junction thin‐film architecture. Thermal side‐chain cleavage enhances interfacial coupling, shifts the dominant photoresponse from 800 to 1000 nm, and substantially improves device performance.
Jenner H. L. Ngai, Zhao Li, Jianfu Ding, Yuning Li   +3 more
wiley   +1 more source

Modeling of a photodiode structure based on a heterojunction ZnO/Si

Технологія та конструювання в електронній апаратурі
In this work, a self-powered photodetector based on a bulk ZnO/Si p–n heterojunction is numerically investigated and analyzed using the Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D).
Ihor Virt, Ivan Padalka
doaj   +1 more source

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

Advanced Materials Technologies, EarlyView.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob, Solbee Lee, Hansol Jeong, Sabiqun Nahar, Jin Jang   +4 more
wiley   +1 more source

Photoelectric Properties of ZnₓCd₁-ₓS-Based Photosensitive Semiconductor Structures with Enhanced Ultraviolet Response

East European Journal of Physics
The work is devoted to the study of the photoelectric characteristics of an Au-ZnxCd1-xS-Mo structured film injection photodetector sensitive in the ultraviolet and visible region of the spectrum of electromagnetic radiation, with maximum sensitivity in ...
R.R. Kabulov, D.B. Istamov, K.T. Suyarov, F.A. Akbarov   +3 more
doaj   +1 more source

Lead‐Free Chiral Hybrid Metal Halides for Circularly Polarized Light‐Emitting Diodes

Advanced Optical Materials, EarlyView.
Lead‐free chiral hybrid metal halides provide a versatile platform for realizing chiroptical responses through chiral modulation of metal–halide frameworks with diverse dimensionalities, induces inversion‐symmetry breaking and enables dissymmetric excited‐state transitions toward efficient circularly polarized luminescence and electroluminescence. This
Kun Zhu, Li Wan
wiley   +1 more source

The digital method of surface reflectance coefficient measurement [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2010
The connection between the reflectance of a surface and the coordinate of picture in a photodetector plane is established. The digital method of measurement of reflectance with application of the multielement photodetector is developed.
Ivanchenko I. A., Santoniy V. I., Smyntyna V. A.   +2 more
doaj  

Nanoporous Scaffold‐Assisted Ligand‐Free CsPbBr3 Quantum Dots for Bright and Ultrapure Green Light‐Emitting Diodes

Advanced Optical Materials, EarlyView.
Networks of confined CsPbBr3 perovskite quantum dots, synthesised within nanoporous silica scaffolds using precursors containing different combinations of butylammonium bromide and crown ether additives, enable electroluminescent devices with 400‐fold enhanced charge injection and transport with respect to control devices, yielding ultrapure green ...
Carlos Romero‐Pérez, Zhongcheng Yuan, Mauricio E. Calvo, Henry J. Snaith, Hernán Míguez   +4 more
wiley   +1 more source

Laser Writing of GaN/Ga2O3 Heterojunction Photodetector Arrays

Advanced Materials Interfaces
Photodetectors play a crucial role in converting light signals into electrical signals and have significant applications in various fields such as communications, imaging, and sensing. However, the fabrication of a photodetector is a complex process that
Pengxiang Sun, Xun Yang, Kexue Li, Zhipeng Wei, Wei Fan, Shaoyi Wang, Weimin Zhou, Chongxin Shan   +7 more
doaj   +1 more source

Photodoping in Wide‐Bandgap Perovskite Solar Cells With MXenes

Advanced Optical Materials, EarlyView.
Ultrafast tandem spectroscopy and DFT modeling reveal the separate dynamics and the imbalance of electrons and holes in wide bandgap perovskite solar cells with MXene incorporation. The enhanced photoconversion performances of the devices are traced to photodoping, with selective hole trapping and suppressed recombination of electrons.
Angelica Simbula, Antonio Agresti, Sara Pescetelli, Sofia Sechi, Nicola Sestu, Francesco Mattana, Federico Pitzalis, Riccardo Pau, David Dell'Angelo, Alessio Filippetti, Alessandro Mattoni, Anna Pazniak, Daniela Marongiu, Valeria Demontis, Francesco Quochi, Michele Saba, Andrea Mura, Giovanni Bongiovanni   +17 more
wiley   +1 more source

PN-Type Near-Infrared High-Speed Graphene Heterojunction Photodetector

IEEE Photonics Journal
In this work, a GaAs-substrate-based PN-type near-infrared high-speed graphene heterojunction photodetector is proposed. The proposed photodetector is only composed of a P-type graphene heterojunction absorption part and a N-type GaAs substrate, where ...
Yun Fang, Qingmin Fu, Yuhang Wei, Jian Liu, Wanchun Yang, Dandan Wang, Xue Zhang   +6 more
doaj   +1 more source