Results 21 to 30 of about 39,529 (311)
A low-cost and simple drop-casting method was used to fabricate a carbon nanodot (C-dot)/all-inorganic perovskite (CsPbBr3) nanosheet bilayer heterojunction photodetector on a SiO2/Si substrate.
Hassan Algadi +4 more
doaj +1 more source
Introduction. At present, an optical transmission of a microwave signal is of great scientific and practical interest. Moreover, this transmission line can also be used to create microwave photonic devices.
I. Yu. Tatsenko +3 more
doaj +1 more source
Strong Anisotropy of Multilayer γ‐InSe‐Enabled Polarization Division Multiplexing Photodetection
Polarized light detection is consequential for optical communication and polarized light imaging. InSe is considered a promising candidate for narrow‐bandgap photodetector. However, monolayer γ‐InSe is an indirect bandgap semiconductor and is ignored for
Xusheng Wang +6 more
doaj +1 more source
High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
Ultraviolet (UV) photodetector has attracted extensive interests due to its wide-ranging applications from defense technology to optical communications.
Menghan Jia +5 more
doaj +1 more source
Self-Driven Photo-Polarized Water Molecule-Triggered Graphene-Based Photodetector
Flowing water can be used as an energy source for generators, providing a major part of the energy for daily life. However, water is rarely used for information or electronic devices.
Shisheng Lin +7 more
doaj +1 more source
Ultrasensitive flexible broadband photodetectors achieving pA scale dark current
Semiconductor physics: Energy saving flexible broadband hybrid photodetector Energy efficient and flexible alternative photodetector that detects both visible and invisible light comes closer to real life than ever.
Xiao Luo +7 more
doaj +1 more source
Research on Germanium Photodetector with Multi-Mode Waveguide Input
In this work, a vertical N-I-P germanium (Ge) photodetector (PD) with a multi-mode waveguide input is presented. The fabricated devices exhibit a low dark current of 10 nA at bias of −1 V, and a high responsivity of exceeding 0.75 A/W over the wavelength
Longsheng Wu +4 more
doaj +1 more source
Optical system consisting of single-mode optical fiber and p-i-n photodiode semiconductor chip with InGaAs active layer was investigated. Considered photodetector module has responsivity in 1.3–1.6 µm.
Ya. N. Kovach +7 more
doaj +1 more source
Broadband photodetectors have attracted substantial attention in recent years. The ternary chalcogenide Ta2NiSe5 is a layered material with a direct narrow-band gap (Eg ~ 0.33 eV) which possesses greatly potential to broadband photodetectors.
Yan Zhang +11 more
doaj +1 more source
A Silicon Electromechanical Photodetector [PDF]
Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert optical information to electrical signals for further signal processing.
Tallur, Siddharth, Bhave, Sunil A.
openaire +3 more sources

