Results 31 to 40 of about 17,235 (255)
In recent years, diamond has shown great potential in solar-blind ultraviolet (UV) photodetection due to its ultrawide bandgap (∼ 5.5 eV) and other superior semiconductor properties.
Qilong Yuan +12 more
doaj +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Conjugated Polymer (MEH-PPV:MWCNTs) Organic Nanocomposite for Photodetector Application
Fabrication of a photodetector consists of the conjugated polymer "MEH-PPV"- poly (2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenlenevinylene) and MEH-PPV:MWCNT nanocomposite thin film. The volume ratio investigated was 0.75:0.25.
Baghdad Science Journal
doaj +1 more source
A high operating temperature mid-wavelength infrared pBn photodetector based on the type-II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated.
Donghai Wu +3 more
doaj +1 more source
Metasurfaces and other structured photonic environments can dramatically modify the absorption and/or light emission of semiconductors. However, the consequences of these changes on the temperature of the system are not well understood. The authors address this problem for colloidal nanocrystals and leverage their findings to convert light into ...
Hugo Kowalczyk +7 more
wiley +1 more source
This study highlights the integration of stable two‐dimensional covalent organic framework (COF) films as photoactive layers in hybrid nanoenergy devices. The results demonstrate their capacity to generate electricity under both sunny and rainy conditions, showcasing versatility and resilience.
Joab D. Guerrero +13 more
wiley +1 more source
In this study, we proposed a novel design for fabricating a unitraveling carrier–type photodetector using In0.52Al0.48As as the collector material. The proposed InAlAs photodetector is based on the structure of a conventional unitraveling carrier
Yaofeng Yi +3 more
doaj +1 more source
Porous Si-SiO2 UV Microcavities to Modulate the Responsivity of a Broadband Photodetector
Porous Si-SiO2 UV microcavities are used to modulate a broad responsivity photodetector (GVGR-T10GD) with a detection range from 300 to 510 nm. The UV microcavity filters modified the responsivity at short wavelengths, while in the visible range the ...
María R. Jimenéz-Vivanco +8 more
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Interface Effects in Ultrathin Silicon on Insulator Films
This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici +8 more
wiley +1 more source
In this paper, we report a mid-wave infrared (MWIR) and long-wave infrared (LWIR) dual-band photodetector capable of voltage-controllable detection band selection.
Yao Zhai, Guiru Gu, Xuejun Lu
doaj +1 more source

