Results 51 to 60 of about 17,235 (255)

Vertical Ge photodetector base on InP taper waveguide

open access: yesResults in Physics, 2018
In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied ...
Iraj Sadegh Amiri   +5 more
doaj   +1 more source

Clustomesogen Showing Sub‐Zero Liquid Crystal Properties: Supramolecular Assembly Between Cs2[Mo6Ii8(OCOC2F5)6] and Hexaethylenoxide Containing Mesogenic Dimers

open access: yesAdvanced Materials, EarlyView.
Associating a red‐NIR phosphorescent octahedral hexanuclear molybdenum cluster compound with hexaethyleneoxide chains bearing mesogenic units on both ends leads to an emissive hybrid liquid crystal showing mesomorphism on a very unusual temperature range down to −25°C.
Killiann Heinz   +11 more
wiley   +1 more source

Leaftronics: Bio‐Fractal Scaffolds From Leaf Venation for Low‐Waste Electronics

open access: yesAdvanced Materials, EarlyView.
“Leaftronics” transforms naturally evolved leaf venation into quasi‐fractal scaffolds for sustainable electronics. Polymer‐infiltrated leaf skeletons can be used to fabricate ultra‐smooth, reflow‐ and thin‐film‐compatible decomposable substrates, while making the same lignocellulose networks conducting results in flexible transparent electrodes.
Rakesh Rajendran Nair   +3 more
wiley   +1 more source

A Broadband Plasmonic Photodetector Based on Graphene‐Black Phosphorus Heterostructure With Enhanced Absorption and Responsivity

open access: yesIET Optoelectronics
The authors theoretically report a plasmonic photodetector based on graphene‐black phosphorus heterostructure which is capable of operating from visible to mid‐infrared (MIR) wavelengths.
Feng Zhou
doaj   +1 more source

Directly Fabricated Flexible Photodetector Based on TiO₂-Doped Carbon Nanosheets Film

open access: yesIEEE Journal of the Electron Devices Society
Flexible photodetector is crucial for the intelligent industrial applications. However, the optical-sensitive materials are usually grown in a high temperature and then transferred onto the flexible substrate.
Yunlong Zhang   +7 more
doaj   +1 more source

An Amorphous (Al0.12Ga0.88)2O3 Deep Ultraviolet Photodetector

open access: yesIEEE Photonics Journal, 2020
The authors report the deposition of an (AlxGa1-x)2O3 amorphous thin film on sapphire substrates by sputter deposition. An amorphous deep ultraviolet (UV) (Al0.12Ga0.88)2O3 photodetector, with a cutoff wavelength at 230 nm, was also fabricated.
Shu-Bai Liu   +3 more
doaj   +1 more source

Large‐Scale Determination of Frontier Orbital Energies of Disordered Small‐Molecule Organic Semiconductors Using Exciplex Emission Spectra

open access: yesAdvanced Materials, EarlyView.
ABSTRACT Accurately knowing the frontier orbital energies of the structurally disordered small‐molecule organic semiconductors that are used in optoelectronic devices such as organic light‐emitting diodes is required to rationally improve their performance. Here, we show that these energies can be deduced with a large accuracy from the peak energies of
Christian B. McDonald   +7 more
wiley   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

open access: yesAdvanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen   +7 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Biodegradable Chitosan Films as Green Resists for Gold Nanowires Fabrication Through AFM‐Based Nanolithography

open access: yesAdvanced Materials Interfaces, EarlyView.
Schematic illustration of a sustainable nanofabrication process: chitosan derived from natural sources is used as a biodegradable thin film resist, patterned via Constant Pulse‐Assisted Force Lithography (CP‐AFL) to create tunable nanogrooves. These grooves template gold nanowire formation, enabling high‐resolution nanopatterning under ambient ...
Paolo Pellegrino   +7 more
wiley   +1 more source

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