Results 91 to 100 of about 42,370 (298)

Silicon and Hybrid Silicon Photodetectors for Photonic Integrated Circuits

, 2012
We will review our recent progress in developing silicon and hybrid silicon photodetectors for photonic integrated circuits. Specifically, we will discuss waveguide-coupled photodetectors using epitaxial III-V growth on silicon, and all-silicon surface ...
Shaoqi Feng, Li, Yu, Lau, Kei May, Poon, Andrew W., Zhang, Yu, Kei-May Lau, Yu Zhang, Andrew W. Poon, Yu Li, Geng, Yu, Yu Geng, Feng, Shaoqi   +11 more
core   +1 more source

Telecom InP-based quantum dash photodetectors grown on Si

, 2021
Photodetectors on Si with high responsivity, large bandwidth, and multispectral operation are required for high data rate communications using Si photonics. We report characteristics of InP-based quantum dash (QDash) photodetectors with a p-i-n structure
Hon Ki Tsang, Xue, Ying, Lau, Kei May, Huang, Jie, Wei Luo, Yi Wang, Wang, Yi, Jie Huang, Ying Xue, Tsang, Hon Ki, Luo, Wei, Kei May Lau, Liying Lin, Lin, Liying   +13 more
core   +1 more source

Directing Near‐Perfect (001) Orientation in Wafer‐Scale BiOI Thin Films via Halide‐Mediated van der Waals Stacking

Advanced Materials, EarlyView.
Our work introduces a new framework that fundamentally changes how orientation in bismuth oxyhalide systems is approached. Comprehensive experiments, backed by theoretical models, reveal the pivotal role of halide anions to modify the van der Waals stacking energies required to direct orientation. Our method enables the fabrication of near perfect (001)
Gabriel Aygur, Ashakiran Maibam, Hayden Tuohey, Tony Nguyen, Mei Xian Low, Sumeet Walia, Zijun (June) Yong, Ravichandar Babarao, Daniel Gomez, Enrico Della Gaspera, Joel van Embden   +10 more
wiley   +1 more source

Metal‐Semiconductor Phase Transition in Multilayer VSe2 for Broadband Photodetector with High Sensitivity

Advanced Electronic Materials
2D 1T‐VSe2 is a charge‐density wave (CDW) system that also exhibits room‐temperature ferromagnetism, making it promising for photodetecting devices.
Yujue Yang, Mengjia Xia, Qixiao Zhao, Zhidong Pan, Huafeng Dong, Xin Zhang, Fugen Wu, Juehan Yang, Nengjie Huo   +8 more
doaj   +1 more source

InP-based waveguide integrated photodetectors

, 2022
S.256-257Resent results of InP-based waveguide integrated photodetectors are reviewed.
Runge, P., Mutschall, S., Ganzer, F., Beckerwerth, T., Zhou, G., Seeger, A.   +5 more
core   +1 more source

Computation‐Less, Bias‐Free, and Ultra‐Broadband Photodetector for On‐Chip Edge Extraction

Advanced Materials, EarlyView.
A computation‐less, bias‐free, and ultra‐broadband photodetector directly converts local optical‐intensity gradients into signed photocurrents through a position‐dependent bi‐directional photoresponse. This intrinsic physical sensing mechanism enables single‐pixel edge extraction from the near‐infrared to the long‐wave infrared at room temperature ...
Jintao Fu, Hao Jiang, Xingsi Liu, Fakun Wang, Yang Peng, Qi Jie Wang, Weibo Gao, Xingzhan Wei, Cheng‐Wei Qiu   +8 more
wiley   +1 more source

Long-wavelength intersubband quantum disc-in-nanowire photodetectors with normal incidence photoresponse [Elektronisk resurs]

, 2018
Semiconductor nanowire (NW) technology has emerged as a key facilitator of novel optoelectronics e.g. solar cells, photodetectors and LEDs. The functional wavelength range of current NW-based photodetectors is typically limited to the visible/ near ...
Pettersson, Håkan,, Karimi, Mohammad,, Samuelson, Lars,, Borgström, Magnus,, Lund University., Limpert, Steven,   +5 more
core  

Spectral Selective and Low‐Noise Thin‐Film Organic Photodetectors Enabled by Electric‐Field Engineering

Advanced Materials, EarlyView.
Molecular doping redistributes the internal electric field in organic photodetectors, providing a new degree of freedom to spatially control carrier transport and collection. Simulations and experiments reveal distinct transport pathways for injected and photogenerated carriers, enabling low dark current under reverse bias and wavelength‐selective ...
Jingwei Yi, Yi Yang, Vahid Mahdikhah, Yibo Shi, Jordan Shanahan, Apurva Gadikar, Yusen Pei, Xinyun Dong, Jacob P Mauthe, Reece Henry, Kenan Gundogdu, Brendan T. O'Connor, Aram Amassian, Harald Ade, Wei You, Franky So   +15 more
wiley   +1 more source

Strong Coupling in Bulk Nanoplasmonic Nanoplatelet Perovskite Scintillators

Advanced Materials, EarlyView.
A bulk scintillating nanocomposite is engineered from CsPbBr3 nanoplatelets and Ag nanocubes to support exciton–plasmon strong coupling under X‐ray excitation. The resulting hybrid polaritonic states appear directly in radioluminescence, opening a route toward polariton‐enabled scintillator design beyond conventional Purcell enhancement.
Michal Makowski, Dominik Kowal, Anna Pniakowska, Kamil Misztal, Mohanad Saadeldin Eid, Joanna Cybinska, Winicjusz Drozdowski, Benoit Mahler, Christophe Dujardin, Detlef Hommel, Liang Jie Wong, Dennis Schaart, Sergio Brovelli, Muhammad Danang Birowosuto   +13 more
wiley   +1 more source

Advances in InX (X: As, Sb) Quantum Dots Infrared Photodetectors

Photonic Sensors
Infrared photodetectors exhibit significant applications in the fields, such as the defense military, industry, and consumer electronics. Leveraging the advantages, like adjustable bandgap, high carrier mobility, solution processing ability, and low cost,
Huiling TAI, Wenxin ZENG, Zaihua DUAN, Yadong JIANG   +3 more
doaj   +1 more source