Results 131 to 140 of about 34,337 (296)

Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m

open access: yes, 2008
A method for fabrication of long-wavelength narrow line-width InGaAs resonant cavity enhanced (RCE) photodetectors in a silicon substrate operating at the wavelength range of 1.3-1.6 mu m has been developed.
Mao, RW   +6 more
core  

Seedless One‐Pot Synthesis of Colloidal InAs Quantum Dots Enabling a High‐Accuracy Photoplethysmography Oximeter

open access: yesAdvanced Science, EarlyView.
A real‐time, non‐contact photoplethysmography (PPG) system based on InAs colloidal quantum dots (CQDs) synthesized via a seedless injection synthesis is demonstrated. The measured oxygen saturation shows considerable agreement with commercial PPG devices.
Beom Kwan Kim   +8 more
wiley   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

open access: yesAdvanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo   +12 more
wiley   +1 more source

Photodetectors for "Laser Anemometry" [PDF]

open access: yes, 1987
Principles of photodetectors have been reviewed and the most common types of photodetectors have been contrasted. Various aspects of photocathode, dynode structures, voltage divider networks and IM anodes of photomultipliers have been discussed ...
Sivasankaram, K
core  

Structural and Compositional Effects on the Scintillation Properties of Fast Emitting Metal‐Organic Frameworks

open access: yesAdvanced Science, EarlyView.
The crystalline structure, the atomic numbers of the constituent elementsand the size of MOF crystals each influence their photoluminescence and scintillation properties in distinct ways. Together, these factors provide valuable guidelines for designing systems with optimized performance and tunable timing characteristics, arising from the synergistic ...
Francesca Cova   +8 more
wiley   +1 more source

Synthesis of Perovskite Nanowires and Their Application for Photodetectors

open access: yesAdvanced Science
1D nanowires (broadly including microwires and quantum wires) of metal halide perovskites exhibit several unique properties due to their distinctive morphology, such as enhanced responsivity under weak light, mechanical flexibility, and optical ...
Jiajun Guo   +7 more
doaj   +1 more source

An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors

open access: yes, 2009
The gain mechanism in GaN Schottky barrier ultraviolet photodetectors is investigated by focused light beam. When the incident light illuminates the central region of the Schottky contact electrode, the responsivity changes very little with the increase ...
Yang H   +7 more
core  

CMOS‐Integrated Synaptic Photoreceptor Chip Inspired by Insect Visual Processing

open access: yesAdvanced Science, EarlyView.
CMOS‐integrated Si QDs/ReS2 synaptic photoreceptor array mimics the parallel processing and wavelength‐selective strategy of insect vision. By combining intrinsic ultraviolet‐violet sensitivity with synaptic plasticity, the chip enables frontend sensory redundancy reduction without external filters, offering a scalable pathway toward lowpower ...
Jian Chai   +25 more
wiley   +1 more source

Silicon‐Embedded Multifunctional Heterogeneous Integration for Miniaturized Photoplethysmography Detection Devices

open access: yesAdvanced Science, EarlyView.
ABSTRACT The multifunctional integration of chips with high flexibility and scalable manufacturing is crucial for enhancing chip performance, reducing chip size, and simplifying chip design. However, balancing volume, cost, flexibility, and functionality using traditional heterogeneous integration methods is challenging.
Lang Chen   +7 more
wiley   +1 more source

Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors

open access: yes, 2007
The influence of defects on the responsivity of GaN Schottky barrier ultraviolet photodetectors with n(-)-GaN/n(+)-GaN layer structures is investigated.
Yang H   +10 more
core  

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