Results 31 to 40 of about 81,856 (309)

Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed

Advanced Electronic Materials, 2023
Due to wavelength‐selective characteristics, the InGaN‐based photodetectors show bright prospects in visible light communication and fast imaging system.
Jixing Chai, Qianhu Liu, Liang Chen, Ben Cao, Deqi Kong, Tingjun Lin, Wenliang Wang, Guoqiang Li   +7 more
doaj   +1 more source

Infrared Photodetectors Based on 2D Materials and Nanophotonics

Advanced Functional Materials, 2021
2D materials, such as graphene, transition metal dichalcogenides, black phosphorus, and tellurium, have been demonstrated to be promising building blocks for the fabrication of next‐generation high‐performance infrared (IR) photodetectors with diverse ...
Jiajia Zha, Mingcheng Luo, Ming Ye, Tanveer Ahmed, Xuechao Yu, D. Lien, Qiyuan He, Dangyuan Lei, J. Ho, J. Bullock, K. Crozier, Chaoliang Tan   +11 more
semanticscholar   +1 more source

Plasmon enhanced perovskite-metallic photodetectors

Materials & Design, 2021
Perovskite based photodetectors and hybrid devices possess distinctive properties which have enabled considerable practical applications since perovskite is an ideal candidate for higher sensitivity and response speed.
Qiongchan Gu, Chunhai Hu, Jiming Yang, Jiangtao Lv, Yu Ying, Xiaoxiao Jiang, Guangyuan Si   +6 more
doaj   +1 more source

Photogating-assisted tunneling boosts the responsivity and speed of heterogeneous WSe2/Ta2NiSe5 photodetectors

Nature Communications
Photogating effect is the dominant mechanism of most high-responsivity two-dimensional (2D) material photodetectors. However, the ultrahigh responsivities in those devices are intrinsically at the cost of very slow response speed. In this work, we report
Mingxiu Liu, Jingxuan Wei, Liujian Qi, Junru An, Xingsi Liu, Yahui Li, Zhiming Shi, Dabing Li, K. Novoselov, Cheng-wei Qiu, Shaojuan Li   +10 more
semanticscholar   +1 more source

Light-driven conductivity in Quasi-one-dimensional charge density wave insulator (TaSe4)2I

iScience
Summary: Charge density waves (CDWs) represent a fundamental phenomenon in condensed matter physics with profound implications for quantum materials research.
Zhenyang Xiao, Junqinq Guo, Guangjian Liu, Jiaren Yuan, Xiaxia Liao, Yangbo Zhou   +5 more
doaj   +1 more source

Polarization‐sensitive and wide‐spectrum photovoltaic detector based on quasi‐1D ZrGeTe4 nanoribbon

InfoMat, 2022
Low‐dimensional semiconductors with in‐plane anisotropy and narrow bandgap have been extensively applied to polarized detection in the near‐infrared (NIR) region.
Ruixue Bai, Tao Xiong, Jinshu Zhou, Yue‐Yang Liu, Wanfu Shen, Chunguang Hu, Faguang Yan, Kaiyou Wang, Dahai Wei, Jingbo Li, Juehan Yang, Zhongming Wei   +11 more
doaj   +1 more source

Recent progress in perovskite-based photodetectors: the design of materials and structures

Advances in Physics: X, 2019
In recent years, taking advantages of high light absorption coefficients, long charge carrier diffusion lengths and intense photoluminescence, halide perovskites have attracted a great deal of interest in developing high-performance optoelectronic ...
Fei Mei, Dongwei Sun, Sijiong Mei, Jiahuan Feng, Yuanming Zhou, Jinxia Xu, Xiangheng Xiao   +6 more
doaj   +1 more source

Promoting 2D Material Photodetectors by Optical Antennas beyond Noble Metals

Advanced Sensor Research, 2023
The distinctive layered crystal structures and diverse properties of 2D layered materials (2DLMs) have established them as prospective building blocks for implementing next‐generation optoelectronics. One critical predicament in terms of light sensing is
Huaxin Yi, Yuhang Ma, Qiaojue Ye, Jianting Lu, Wan Wang, Zhaoqiang Zheng, Churong Ma, Jiandong Yao, Guowei Yang   +8 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Non‐volatile Sliding Ferroelectric Memory Effect in Ultrathin γ‐InSe

Advanced Electronic Materials
Ferroelectrics exhibit field‐tunable non‐volatile polarization, making them essential for modern electronic devices, including memories and sensors. Conventional ferroelectric transistors typically suffer from limited memory windows and poor fatigue ...
Yue Li, Luoyang Ding, Zhixiong Li, Feng Chen, Xiaoyao Weng, Min Zhu, Siyuan Wan, Yangbo Zhou   +7 more
doaj   +1 more source