Results 51 to 60 of about 42,370 (298)
Recent advances on organic‐inorganic hybrid perovskite photodetectors with fast response
In the last decade, optoelectronic devices based on organic‐inorganic hybrid perovskite (OIHP) materials, which have unique advantages of direct bandgap, large absorption coefficient, low density of defects, long charge carrier lifetime, diffusion length,
Yan Zhao, Chenglong Li, Liang Shen
doaj +1 more source
Ultrahigh-speed graphene-based optical coherent receiver
Graphene-based photodetectors have many advantages for applications. Here, the authors demonstrate a high-speed optical coherent receiver for optical communications based on graphene-on-plasmonic slot waveguide photodetectors.
Yilun Wang +11 more
doaj +1 more source
Chiral dopants induce supramolecular chirality in an achiral polymer (PFO), generating spin‐polarized carriers via the chiral‐induced spin selectivity (CISS) and suggesting a possible contribution of Spin‐polarized carrier transport to circularly polarized electroluminescence (CPEL).
Kazuyuki Asahi +4 more
wiley +1 more source
Photodetectors with a Bipolar Stacked Structure and Their Application
Bipolar photodetectors are a type of photodetector that utilizes bipolar heterojunctions to convert light into electrical signals. They are well suited for a variety of optoelectronic signal conversion applications because of their wide-spectrum ...
Dan Zhao +4 more
doaj +1 more source
A post‐growth method is demonstrated to realize energy‐tunable quantum emitters in GaAs/GaAsN/GaAs core–multishell nanowires on a Si substrate. By combining the N‐induced bandgap reduction with H‐ion irradiation, the GaAsN potential landscape is engineered, enabling isolated, narrow emission lines that function as single‐photon sources with g(2)(0) ∼ 0.
Akant Sagar Sharma +10 more
wiley +1 more source
III–V nanowires on silicon (100) as plasmonic-photonic hybrid meta-absorber
Integration of functional infrared photodetectors on silicon platforms has been gaining attention for diverse applications in the fields of imaging and sensing. Although III–V semiconductor is a promising candidate for infrared photodetectors on silicon,
Hyunseok Kim +3 more
doaj +1 more source
Sb(2)O(3) nanobelt networks for excellent visible-light-range photodetectors
Excellent photoconductive properties have been found in Sb(2)O(3) nanobelts synthesized by a surfactant-assisted solvothermal method. Visible-light photodetectors have been designed from Sb(2)O(3) nanobelt networks using micrometer-wide gold wires as ...
Liao, M. Y. +19 more
core +1 more source
Multiplier Effects of Photodetectors—Source of Gain
A photodetector is a type of optoelectronic device with excellent photoelectric conversion abilities, which has especially important applications in many fields such as optical communication, image sensing, aerospace/environmental detection, and military
Ming Yang +3 more
core +1 more source
We demonstrate that halide composition determines phase morphology, governing distinct operating mechanisms in mixed halide perovskites. Phase segregating 75% Br compositions enhance solar cell performance, whereas intrinsically phase‐separated 95% Br compositions provide stable light emitting diodes.
Tal Binyamin +6 more
wiley +1 more source
Tin sulfide semiconductor nanowires (NWs) have been widely investigated for photodetection applications because of their good optical and electrical properties.
Zheng Dingshan +13 more
doaj +1 more source

