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Heavy Metal Free Ag<sub>2</sub>Se Quantum Dot Inks for Near to Short-Wave Infrared Detection. [PDF]
ACS Appl Mater InterfacesPaul SJ +5 more
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Applied Optics, 1975
Planar passivated germanium photodiodes have been developed whose useful response at 22 degrees C extends from 0.6 microm to 1.85 microm at a nominal operating voltage of 20 V. Typical characteristics at 22 degrees C are diode capacitance, 100 pF/cm(2); rise and fall times, 10 nsec; leakage current, 2.5 mA/cm(2) ; D*(1.54 microm) approximately 2.5 x 10(
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Planar passivated germanium photodiodes have been developed whose useful response at 22 degrees C extends from 0.6 microm to 1.85 microm at a nominal operating voltage of 20 V. Typical characteristics at 22 degrees C are diode capacitance, 100 pF/cm(2); rise and fall times, 10 nsec; leakage current, 2.5 mA/cm(2) ; D*(1.54 microm) approximately 2.5 x 10(
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LSO/photodiode and LSO avalanche photodiode detectors
IEEE Conference on Nuclear Science Symposium and Medical Imaging, 2003The performance of Lu/sub 2(1-x)/Ce/sub 2x/(SiO/sub 4/)O (LSO) detectors was assessed under laboratory conditions. The PMT (photomultiplier tube) and the APD (avalanche photodiode) gave the same energy resolution when used with LSO, although the APD displayed a thermal noise threshold of 30 keV compared to >
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Photodiode and method of fabricating a photodiode
The invention relates to a photodiode, comprising a substrate (1) formed by a III-V semiconductor material; at least one light absorption layer (5); and at least one doped contact layer (31), wherein the absorption layer (5) is to be illuminated through the contact layer (31). According to the invention the contact layer (31) comprises or consists of aRunge, Patrick, Beckerwerth, Tobias
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3rd IEEE International Conference on Group IV Photonics, 2006., 2006
K. Ohashi +7 more
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K. Ohashi +7 more
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WO2003100871 A UPAB: 20040115 NOVELTY - The device has a semiconducting substrate (12), a photosensitive region (18,24) in the substrate with a spatial charging zone region (18) for producing a drift current component and a diffusion region (24) for producing a diffusion current component and an isolation device (20) in the substrate for at least ...
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