Results 71 to 80 of about 67,272 (298)

A photodiode for detection within molecular diagnostics [PDF]

, 2008
A photodiode (200), for instance a PN or a PIN photodiode, is disclosed. The photodiode receives incident radiation having first and second spectral distributions, where the first spectral distribution is spectrally shifted from the second spectral ...
French, Ian, Young, Nigel D., van der Zaag, Pieter J.; id_orcid   +2 more
core   +4 more sources

Recent Advances of Slip Sensors for Smart Robotics

Advanced Materials Technologies, EarlyView.
This review summarizes recent progress in robotic slip sensors across mechanical, electrical, thermal, optical, magnetic, and acoustic mechanisms, offering a comprehensive reference for the selection of slip sensors in robotic applications. In addition, current challenges and emerging trends are identified to advance the development of robust, adaptive,
Xingyu Zhang, Liao Wu, Shuai He, Zhao Sha, Yuwan Huang, Shuying Wu, Dewei Chu, Chun H. Wang, Shuhua Peng   +8 more
wiley   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source

Ultrathin and Flexible Organic Light‐Addressable Potentiometric Sensors

Advanced Materials Technologies, EarlyView.
The first ultrathin, fully organic, and flexible light‐addressable potentiometric sensor (LAPS) is demonstrated. With a thickness of only 2.3–2.9 µm, this standalone film offers sensitivity to electrolyte potential and stable performance for over 170 days.
Ami Ichikawa, Yudai Hemmi, Yuanyuan Guo, Georgios Bairaktaris, Carl Frederik Werner, Tomohiko Murayama, Hiroyuki Matsui   +6 more
wiley   +1 more source

Reduction in Dark Current in Photodiodes: A Review

Micromachines
Dark current represents a fundamental limiting factor in photodiode performance, establishing the noise floor and constraining detectivity in low-light applications.
Alper Ülkü, Ralph Potztal, Tobias Blaettler, Cengiz Tuğsav Küpçü, Reto Besserer, Dietmar Bertsch, Tina Strüning, Samuel Huber   +7 more
doaj   +1 more source

Scaling and Modeling of High Temperature 4H-SiC p-i-n Photodiodes

IEEE Journal of the Electron Devices Society, 2018
4H-SiC p-i-n photodiodes with various mesa areas (40 000 μm2, 2500 μm2, 1600 μm2, and 400 μm2) have been fabricated. Both C-V and I-V characteristics of the photodiodes have been measured at room temperature, 200 °C ...
Shuoben Hou, Per-Erik Hellstrom, Carl-Mikael Zetterling, Mikael Ostling   +3 more
doaj   +1 more source

Printed SWCNT‐Based p–n Junction Thin‐Film Near‐Infrared Photoresistors Enabled by a Sustainable Furan‐Derived π‐Conjugated Polymer

Advanced Materials Technologies, EarlyView.
A sustainable polymer–carbon nanotube bilayer enables efficient near‐infrared photodetection in a simple lateral planar p–n junction thin‐film architecture. Thermal side‐chain cleavage enhances interfacial coupling, shifts the dominant photoresponse from 800 to 1000 nm, and substantially improves device performance.
Jenner H. L. Ngai, Zhao Li, Jianfu Ding, Yuning Li   +3 more
wiley   +1 more source

Low-noise photodiode-amplifier circuit

, 1994
A photodiode-amplifier circuit with the photodiode in the feedback path is presented. It is named the PIF-circuit. No resistor is needed at the amplifier input to provide a path to ground for the signal and leakage currents from the photodiode and the ...
Ericson, Klas,, Hyyppä, Kalevi,, Ericson, Klas, Hyyppä, Kalevi   +3 more
core   +1 more source

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

Advanced Materials Technologies, EarlyView.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob, Solbee Lee, Hansol Jeong, Sabiqun Nahar, Jin Jang   +4 more
wiley   +1 more source

Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared

International Journal of Metrology and Quality Engineering, 2017
The metrology group of radiometric and pyrometric measurements of INSAT include among others the development of detectors that will be used as a standard in the MMA Laboratory for optical radiation measurements in the visible and infrared spectral range.
Ben Achour Zahra, Hammami Marwa, Touayar Oualid   +2 more
doaj   +1 more source