Results 271 to 280 of about 201,674 (321)

Recent Advances of Graphene‐Based Wearable Sensors: Synthesis, Fabrication, Performance, and Application in Smart Device

open access: yesAdvanced Materials Interfaces, EarlyView.
This review article explores applications in wearable sensors such as mechanical, electrophysiological, and gas sensors, highlighting advancements that improve device performance and predictability. In addition to analyzing graphene's synthesis techniques, including traditional and advanced laser‐based methods, the article discusses fabrication ...
Fatemeh Saeedi   +2 more
wiley   +1 more source

One-dimensional photonic crystal structure enhanced external-magnetic-field-free spintronic terahertz high-field emitter. [PDF]

open access: yesSci Technol Adv Mater
Yang Z   +8 more
europepmc   +1 more source

The Rise of Refractory Transition‐Metal Nitride Films for Advanced Electronics and Plasmonics

open access: yesAdvanced Materials Interfaces, EarlyView.
Transition‐metal nitrides (TMNs) are exceptional materials with high stability, biocompatibility, and semiconductor integration, which have been extensively employed in various fields. However, the epitaxial growth of TMN films remains a challenge. The absence of high‐quality TMNs limits the understanding of their condensed matter physics and hinders ...
Jiachang Bi   +3 more
wiley   +1 more source

Author Correction: Axion topology in photonic crystal domain walls. [PDF]

open access: yesNat Commun
Devescovi C   +8 more
europepmc   +1 more source

Zinc Chalcogenide Based Shell Layers for Colloidal Quantum Wells

open access: yesAdvanced Materials Interfaces, EarlyView.
A new synthetic route is developed for the synthesis of CdSe/ZnSe/ZnS multi‐shell nanoplatelets (NPLs) with emissions between 615 and 630 nm and photoluminescence quantum yields up to 90%. Control over the lateral size of the starting CdSe core enabled the narrowing of the emission linewidth to 20 nm.
Cagatay Han Aldemir   +5 more
wiley   +1 more source

Strain Relaxation of Al‐Rich α‐(AlGa)2O3 and α‐Al2O3/Ga2O3 Superlattice on m‐Plane Sapphire Substrates by Plasma‐Assisted Molecular Beam Epitaxy

open access: yesAdvanced Materials Interfaces, EarlyView.
Strain relaxation of Al‐rich α‐(AlGa)2O3 single layers and an α‐Al2O3/Ga2O3 superlattice structure grown on m‐plane sapphire substrates by molecular beam epitaxy are discussed. V‐shaped dislocations are formed on the Al‐rich α‐(AlGa)2O3 sample surface to reduce elastic strain energy accumulated during growth.
Riena Jinno, Hironori Okumura
wiley   +1 more source

1,550-nm photonic crystal surface-emitting laser diode fabricated by single deep air-hole etch. [PDF]

open access: yesNanophotonics
Kim M   +7 more
europepmc   +1 more source

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