Results 121 to 130 of about 183,112 (291)

All-Solid-Thin Film Electrochromic Devices Consisting of Layers ITO / NiO / ZrO2 / WO3 / ITO [PDF]

open access: yesЖурнал нано- та електронної фізики, 2013
We have prepared an all-solid-thin film electrochromic device (ECD), consisting of layers ITO / NiO / ZrO2 / WO3 / ITO using the PVD method. The WO3 is used as an electrochromic layer, NiO as an ion-storage layer, and ZrO2 as a solid electrolyte layer in
K.J. Patel   +4 more
doaj  

Spatiotemporal Plasma–Mediated Laser Fabrication of Ultrahigh‐Aspect‐Ratio Nanochannel Arrays for Vertical Perovskite Nanowire Semiconductor Devices

open access: yesAdvanced Functional Materials, EarlyView.
A spatiotemporal plasma–mediated laser processing approach is developed to fabricate ultrahigh–aspect ratio nanochannel arrays and corresponding perovskite nanowire arrays within transparent materials for optoelectronics devices. The laser‐fabricated nanochannels serve as templates for controlled perovskite infiltration and crystallization, enabling ...
Taijin Wang   +3 more
wiley   +1 more source

Heterogeneous Morphologies and Hardness of Co-Sputtered Thin Films of Concentrated Cu-Mo-W Alloys

open access: yesNanomaterials
Heterogeneous microstructures in Cu-Mo-W alloy thin films formed by magnetron co-sputtering immiscible elements with concentrated compositions are characterized using scanning transmission electron microscopy (STEM) and nanoindentation.
Forrest Wissuchek   +2 more
doaj   +1 more source

Melt Grafting of Geometry‐Tailored Voltage Stabilizers for High‐Performance Polypropylene Insulation

open access: yesAdvanced Functional Materials, EarlyView.
A scalable one‐step melt grafting strategy is developed to enhance the dielectric properties of isotactic polypropylene by covalently incorporating thermally stable aromatic voltage stabilizers. This solvent‐free approach improves volume resistivity and DC breakdown strength through deep trap formation and charge localization, offering a sustainable ...
Nazirul Mubin bin Normansah   +9 more
wiley   +1 more source

Selective Charge Injection via Topological van der Waals Contacts for Barrier‐Free p‐Type TMD Transistors

open access: yesAdvanced Functional Materials, EarlyView.
 Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods   +15 more
wiley   +1 more source

Physical Vapor Deposition of Indium-Doped GeTe: Analyzing the Evaporation Process and Kinetics

open access: yesInorganics
Chalcogenide glasses have broad applications in the mid-infrared optoelectronics field and as phase-change materials (PCMs) due to their unique properties.
Andi Zaidan   +2 more
doaj   +1 more source

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki   +7 more
wiley   +1 more source

Growth of Bio Sensor Materials by Physical Vapor Transport Method [PDF]

open access: yes
Recently there is a big thrust on bio-inspired sensors and there has been a large rise in the investment and expectations for nanotechnology to meet these goals. For in situ sensor development materials deposition on substrate is essential part of device
Arnold, Bradley   +7 more
core   +1 more source

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