Evidence for erbium-erbium energy migration in erbium(III) bis(perfluoro-p-tolyl)phosphinate [PDF]
, 2008 Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Gillin, WP +4 more
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Silicon-based organic light-emitting diode operating at a wavelength of 1.5 mu m [PDF]
, 2000 Copyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Curry, RJ +3 more
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Quenching of Er(III) luminescence by ligand C-H vibrations: Implications for the use of erbium complexes in telecommunications [PDF]
, 2006 Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Gillin, WP +5 more
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1.54 mu m electroluminescence from erbium (III) tris(8-hydroxyquinoline) (ErQ)-based organic light-emitting diodes [PDF]
, 1999 Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Curry, RJ, Gillin, WP
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Effect of strain on the interdiffusion of InGaAs/GaAs heterostructures [PDF]
, 1999 Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Gillin, WP
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Gallium nitride wafer slicing by a sub-nanosecond laser: effect of pulse energy and laser shot spacing [PDF]
, 2021 Gallium nitride (GaN)-based devices surpass the traditional silicon-based power devices in terms of higher breakdown voltage, faster-switching speed, higher thermal conductivity, and lower on-resistance.
Amano, Hiroshi +9 more
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Characterization of interdiffusion around miscibility gap of lattice matched InGaAs/InP quantum wells by high resolution x-ray diffraction [PDF]
, 2007 Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Azároff L. V., F. Bollet, W. P. Gillin
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An optical study of interdiffusion in ZnSe/ZnCdSe [PDF]
, 1996 Copyright 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Bradley +9 more
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Separating the roles of electrons and holes in the organic magnetoresistance of aluminum tris(8-hydroxyquinoline) organic light emitting diodes [PDF]
, 2008 Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Desai, P +4 more
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Interdiffusion in InGaAs/GaAs: The effect of growth conditions [PDF]
, 1998 Copyright 1998 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Gillin, WP, Homewood, KP, Khreis, OM
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