Results 11 to 20 of about 23,229 (304)

Piezoelectric Charge Coefficient of Halide Perovskites [PDF]

open access: yesMaterials
Halide perovskites are an emerging family of piezoelectric and ferroelectric materials. These materials can exist in bulk, single-crystal, and thin-film forms. In this article, we review the piezoelectric charge coefficient (dij) of single crystals, thin films, and dimension-tuned halide perovskites based on different measurement methods.
Muddam, Raja Sekhar   +2 more
openaire   +4 more sources

Parameter Identification of the Nonlinear Piezoelectric Shear d15 Coefficient of a Smart Composite Actuator

open access: yesActuators, 2021
The objective of this work is to characterize the nonlinear dependence of the piezoelectric d15 shear coefficient of a composite actuator on the static electric field and include this effect in finite element (FE) simulations.
Pelin Berik, Peter L. Bishay
doaj   +2 more sources

Asymptotic Effective Piezoelectric Coefficient Solution of Piezoresponse Force Microscopy for a Transversely Isotropic Piezoelectric Film

open access: yesMATEC Web of Conferences, 2016
Based on the coupled theory, a simple explicit solution of piezoresponse force microscopy (PFM) in determining the effective piezoelectric coefficient for an ultra-thin transversely isotropic piezoelectric film bonded to a rigid conducting substrate is ...
Wang J. H.
doaj   +2 more sources

Balancing the piezoelectric coefficient and carrier concentration of Bi2WO6−x for ultrahigh piezocatalysis [PDF]

open access: yesJournal of Advanced Ceramics
Balancing the piezoelectric coefficient and carrier concentration of materials is key in the field of piezocatalysis. In this work, Bi2WO6 material with both piezoelectric and semiconductor properties was chosen as a model material.
Ying Wang   +10 more
doaj   +2 more sources

Accurate measurement of the piezoelectric coefficient of thin films by eliminating the substrate bending effect using spatial scanning laser vibrometry [PDF]

open access: yes, 2010
One of the major difficulties in measuring the piezoelectric coefficient d(33,f) for thin films is the elimination of the contribution from substrate bending.
Leighton, Glenn J. T., Huang, Zhaorong
core   +1 more source

Characterisation of PZT thin film micro-actuators using a silicon micro-force sensor [PDF]

open access: yes, 2007
This paper reports on the measurements of displacement and blocking force of piezoelectric micro-cantilevers. The free displacement was studied using a surface profiler and a laser vibrometer.
Ensell, Graham   +10 more
core   +1 more source

Hysteresis Characteristics and MPI Compensation of Two-Dimensional Piezoelectric Positioning Stage

open access: yesMicromachines, 2022
Piezoelectric positioning stage is the core component of precision positioning system and advanced instrument. Its hysteresis characteristics, especially rate-dependent characteristics, are the main factors affecting the positioning or control accuracy ...
Wanqiang Wang   +3 more
doaj   +1 more source

Theoretical and experimental research on the influence of multiple piezoelectric effects on physical parameters of piezoelectric actuator

open access: yesAIP Advances, 2015
Compared with the traditional actuator of machinery and electricity, the piezoelectric actuator has the advantages of a compact structure, small volume, no mechanical friction, athermancy and no electromagnetic interference.
Liping Shi   +3 more
doaj   +1 more source

Greatly improved piezoelectricity and thermal stability of (Na, Sm) Co-doped CaBi2Nb2O9 ceramics

open access: yesAdvanced Powder Materials, 2023
Calcium bismuth niobate (CaBi2Nb2O9) is regarded as one of the most potential high-temperature piezoelectric materials owing to its highest Curie point in bismuth layer-structured ferroelectrics.
Xiaogang Luo   +6 more
doaj   +1 more source

Apparent Reduction in the Value of the d 33 Piezoelectric Coefficient in PZT Thick Films. [PDF]

open access: yes, 2002
Thick PZT films (1 - 20 m) have been prepared using a composite sol gel technique whereby PZT powder and a PZT producing sol are formed into a slurry and spin coated onto silicon wafers. The maximum relative permittivity obtained was approximately 80%
Dorey, RA   +3 more
core   +1 more source

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