Results 71 to 80 of about 7,127 (284)

Spontaneous polarization and piezoelectricity in boron nitride nanotubes

open access: yes, 2003
Ab initio calculations of the spontaneous polarization and piezoelectric properties of boron nitride nanotubes show that they are excellent piezoelectric systems with response values larger than those of piezoelectric polymers.
Bernholc, J.   +4 more
core   +2 more sources

Unlocking Photodetection Mode Switching from a Simple Lateral Design

open access: yesAdvanced Functional Materials, EarlyView.
A simple lateral 2D perovskite photodetector capable of switching among transient, continuous, and dual transient/continuous photoresponse modes is achieved by integrating photoconductive effects with capacitive coupling from the SiO2/Si substrate. Such light‐programmable photodetection mode switching enables triple‐channel information transmission and
Zijun (June) Yong   +10 more
wiley   +1 more source

Structure and dielectric response in the high $T_c$ ferroelectric Bi(Zn,Ti)O$_3$-PbTiO$_3$ solid solutions

open access: yes, 2006
Theoretical {\em ab initio} and experimental methods were used to investigate the $x$Bi(Zn,Ti)O$_3$-(1-$x$)PbTiO$_3$ (BZT-PT) solid solution. We find that hybridization between Zn 4$p$ and O 2$p$ orbitals allows the formation of short, covalent Zn-O ...
Andrew M. Rappe   +8 more
core   +1 more source

Tracing Sub‐Monolayer Contamination on Wafer‐Scale 2D Materials

open access: yesAdvanced Functional Materials, EarlyView.
Sub‐monolayer adventitious carbon contamination limits the performance and reproducibility of 2D material‐based devices. This study demonstrates scanning helium microscopy (SHeM) as a non‐destructive, ultra‐sensitive tool for wafer‐scale imaging of surface cleanliness.
Chenyang Zhao   +7 more
wiley   +1 more source

Study on Influence of AC Poling on Bulk Photovoltaic Effect in Pb(Mg1/3Nb2/3)O3‐PbTiO3 Single Crystals

open access: yesAdvanced Electronic Materials
The bulk photovoltaic effect (BPVE) provides a theory of surpassing the Schockley–Queisser limit. However, improving the BPVE efficiency to a level comparable to that of the semiconductor‐based efficiencies is challenging in practice due to conflicting ...
Vasilii Balanov   +4 more
doaj   +1 more source

Design Strategies and Emerging Applications of High‐Performance Flexible Piezoresistive Pressure Sensors

open access: yesAdvanced Functional Materials, EarlyView.
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo   +2 more
wiley   +1 more source

The Structural Complexity of (Bi0.5Na0.5)TiO3-BaTiO3 as Revealed by Raman Spectroscopy

open access: yes, 2010
The structural phase diagram of the Pb-free ferroelectric (Na1/2Bi1/2)1-xBaxTiO3 (NBT-BT), x 0.055, where bulk-property anomalies appear to signal a transition to a nonpolar or antiferroelectric phase.
B. Jaffe   +6 more
core   +1 more source

Optoelectrical Devices for Neural Interfacing: Engineering Integration, Stability, and Multimodal Sensing

open access: yesAdvanced Healthcare Materials, EarlyView.
Implantable optoelectrical devices are an effective resource for the modulation and monitoring of neural activity with high spatiotemporal resolution. This review discusses current challenges faced by these devices and outlines future perspectives for the development of next‐generation neural interfaces targeting chronic, multisite, and multimodal ...
Stella Aslanoglou   +4 more
wiley   +1 more source

High-Power Characteristics of Piezoelectric Transducers Based on [011] Poled Relaxor-PT Single Crystals

open access: yesSensors
[011] poled relaxor-PT single crystals provide superior piezoelectric constants and electromechanical coupling factors in the 32 crystal directions, and also exhibit high electrical stability under compressive stresses and temperature changes.
Soohyun Lim   +6 more
doaj   +1 more source

Transistor Switches using Active Piezoelectric Gate Barriers

open access: yes, 2015
This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an electromechanical ...
Ajoy, Arvind   +3 more
core   +1 more source

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