A Study of Reverse Characteristics of GaN-on-Si Quasi-Vertical PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment [PDF]
MicromachinesIn this work, we show a high-performance GaN-on-Si quasi-vertical PiN diode based on the combination of beveled sidewall and fluorine plasma treatment (BSFP) by an inductively coupled plasma (ICP) system.
Fuchun Jia +11 more
doaj +4 more sources
Design of an Absorptive High-Power PIN Diode Switch for an Ultra-Wideband Radar
IEEE Journal of Microwaves, 2022 This paper details the development of a low-loss, PIN diode single-pole double-throw (SPDT) absorptive switch for an ultra-wideband radar. The fabricated switch operates with a peak power of 200 watts at a 10% duty cycle.
Deepak Elluru +7 more
doaj +2 more sources
Damage accumulation mechanism in PIN diode limiters induced via multiple microwave pulses. [PDF]
Sci Rep, 2020 Positive-intrinsic-negative (PIN) diodes are widely used as limiters to protect sensitive components from damage in radio frequency (RF) receiver systems and communication front-ends.
Zhao J, Chen Q, Zhao G, Chen C, Chen Z.
europepmc +2 more sources
Investigation of the nonlinearity of PIN diode on frequency reconfigurable patch antenna
The Journal of Engineering, 2023 In this work, the nonlinearity of PIN diode on frequency reconfigurable patch antenna is investigated. To perform frequency reconfiguration, the proposed design makes use of the switching capabilities of a PIN diode.
Umar Musa +6 more
doaj +2 more sources
A Broadband 1-Bit Single-Layer Reconfigurable Reflectarray Unit Cell Based on PIN Diode Model
IEEE Access, 2023 Microstrip reconfigurable reflectarray antennas (RRAs) have great potential for advanced systems including satellite communications and the 6th generation (6G) wireless mobile communication networks.
Hoang Dang Cuong +4 more
doaj +2 more sources
1.4 GHz Low-Cost PIN Diode Phase Shifter for
IEEE Access, 2019 A 1.4 GHz 4-bit positive intrinsic negative (PIN) diode phase shifter with compact reflective loads for an L-band soil moisture measuring radiometer phased array antenna has been successfully designed.
Kim Tuyen Trinh +3 more
doaj +2 more sources
X-Shaped Dual-Band Slot Antenna with Simultaneous Pattern Diversity and Frequency Tuning [PDF]
SensorsThis paper proposes a frequency-reconfigurable and active beam-switching antenna based on an X-shaped slot array integrated with a diode-based switching network.
Youngjin Cho, Youngje Sung
doaj +2 more sources
Frequency reconfigurable PIN diode-based Reuleaux-triangle-shaped monopole antenna for UWB/Ku band applications. [PDF]
Sci RepBayer Keskin SE +2 more
europepmc +3 more sources
A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics [PDF]
MicromachinesIn this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC,
Yanjuan Liu, Fangfei Bai, Junpeng Fang
doaj +2 more sources
1.2 kV Pin Diodes with SiCrystal Epiwafer
Materials Science Forum, 2007 Silicon carbide devices limitations often originate from the quality of the substrate material. Therefore it is interesting to investigate devices fabricated on alternative source materials. Currently, CREE is the world market leader of SiC wafers. Nowadays, some new companies begin to propose alternative material.
Heu Vang +8 more
openalex +3 more sources