A Study of Reverse Characteristics of GaN-on-Si Quasi-Vertical PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment [PDF]
MicromachinesIn this work, we show a high-performance GaN-on-Si quasi-vertical PiN diode based on the combination of beveled sidewall and fluorine plasma treatment (BSFP) by an inductively coupled plasma (ICP) system.
Fuchun Jia +11 more
doaj +2 more sources
A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics [PDF]
MicromachinesIn this paper, a novel 4H-SiC LDMOS structure with a trench heterojunction in the source (referred as to THD-LDMOS) is proposed and investigated for the first time, to enhance the reverse recovery performance of its parasitic diode. Compared with 4H-SiC,
Yanjuan Liu, Fangfei Bai, Junpeng Fang
doaj +2 more sources
Machine learning enabled dual to wideband frequency agile $$\:{\varvec{A}\varvec{l}}_{2}{\varvec{O}}_{3}\:$$ ceramic-based dielectric MIMO antenna for 5G new radio applications [PDF]
Scientific ReportsThis article presents a dual-band to wideband Frequency Agile (FA) rectangular dielectric resonator (DR) based hybrid MIMO antenna for 5G New Radio (NR) application with connected ground. The DR is made of Al2O3 (εr = 9.8) ceramic material.
Jayant Kumar Rai +5 more
doaj +2 more sources
Power Limiter with PIN Diode Embedded in Cavity to Minimize Parasitic Inductance [PDF]
Journal of Electromagnetic Engineering and Science, 2022 This letter introduces a power limiter that limits the input power to protect the receiver when a large power enters the radio frequency receiver. When the power limiter receives a large power signal, a positive-intrinsic-negative (PIN) diode is turned ...
Dong Yun Jung +6 more
doaj +1 more source
Design of an Absorptive High-Power PIN Diode Switch for an Ultra-Wideband Radar
IEEE Journal of Microwaves, 2022 This paper details the development of a low-loss, PIN diode single-pole double-throw (SPDT) absorptive switch for an ultra-wideband radar. The fabricated switch operates with a peak power of 200 watts at a 10% duty cycle.
Deepak Elluru +7 more
doaj +1 more source
Nantong Daxue xuebao. Ziran kexue ban, 2022 As the third generation of wide band gap semiconductor material, SiC has high critical electric field, high thermal conductivity and other characteristics, and the PIN power diode devices made from this material can meet the requirements of high pressure,
CHEN Hongfu; WANG Yijin; YU Yanwei; CHEN Zhipeng; HE Jiacheng; GAO Zijian; LUO Man; YU Chenhui
doaj +1 more source
Scientific Reports, 2022 Positive-intrinsic-negative (PIN) limiters are widely used to protect sensitive components from leakage power itself and adjacent high-power injection. Being the core of a PIN limiter, the PIN diode is possible to be burnt out by the external microwave ...
Jingtao Zhao +6 more
doaj +1 more source
DESIGN OF NEW COMPOUND RECONFIGURABLE MICROSTRIP ANTENNA FOR C AND KU BANDS APPLICATIONS
Journal of Engineering and Sustainable Development, 2023 A compound reconfigurable microstrip antenna has been analyzed and designed using switching a PIN diode to switch between different modes of operating frequencies as well as radiation pattern directions.
Mushreq Al-Tamimi, Raad Hamdan Thaher
doaj +1 more source
Reverse Recovery of 50 V Silicon Charge Plasma PIN Diode
IEEE Access, 2020 In this article, a novel approach is used for the first time to design a high-voltage PIN diode without any chemical doping process of cathode and anode region.
Sara Hahmady, Stephen Bayne
doaj +1 more source
Design and Analysis of a Frequency Reconfigurable Penta-Band Antenna for WLAN and 5G Applications [PDF]
Journal of Electromagnetic Engineering and Science, 2021 This paper presents a discussion on a low-profile, frequency-reconfigurable penta-band antenna. This antenna consists of two asymmetric L-shaped rectangular patches electrically connected by a single PIN diode.
Rekha Shanmugam
doaj +1 more source