Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
Advanced Electronic Materials, EarlyView.A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
Analysis of the reverse I-V characteristics of diamond-based PIN diodes
, 2017 Mehdi Saremi +6 more
openalex +2 more sources
Epitaxial Growth of p‐Type β‐Ga2O3 Thin Films and Demonstration of a p–n Diode
Advanced Electronic Materials, EarlyView.This study demonstrates p‐type conductivity in β‐Ga2O3 via Te–Mg co‐doping using MOCVD. The films show tunable hole concentrations up to 1.78×1017 cm−3, and a fabricated p–n diode exhibits rectifying behavior. Density functional theory reveals that Te introduces an intermediate band, lowering the Mg acceptor ionization energy and enabling p‐type ...
Chuang Zhang +2 more
wiley +1 more source
Enhancing Discharge Performance and Image Lag Characteristics in PIN Diode X-Ray Sensors with a Reset Transistor. [PDF]
Sensors (Basel)Jang H, Heo J, Bok M, Lim E.
europepmc +1 more source
A separated RC-IGBT with PIN and MPS diode
, 2015 Weizhong Chen, Wei Wang, Xi Qu
openalex +2 more sources
Comments onDetermination of X-ray flux using silicon pin diodesby R. L. Owenet al.(2009).J. Synchrotron Rad.16, 143–151 [PDF]
, 2009 Michael Krumrey
openalex +1 more source
High‐Speed Flexible Schottky Diodes Based on Carbon Nanotubes
Advanced Electronic Materials, EarlyView.We demonstrate a flexible Schottky diode based on carbon nanotube network thin film, and the devices are fabricated via a low‐temperature process on a PI substrate, which exhibits excellent radio‐frequency characteristics, with a high responsivity 6 A/W at zero bias, a high intrinsic cut‐off frequency reaching 153 GHz, and an extrinsic cut‐off ...
Yan Li +6 more
wiley +1 more source
Novel compact UWB antenna with reconfigurable dual‐band notches using pin diode switches actuated without λg/4 DC bias lines [PDF]
, 2012 Mohammad Naser‐Moghadasi +3 more
openalex +1 more source
Solution Processed Polymer Source‐Gated Transistors for Zero‐Power Photosensing
Advanced Electronic Materials, EarlyView.This study demonstrates the first solution‐processed bulk heterojunction organic source‐gated transistors (OSGTs) and photo‐OSGTs fabricated using DPP‐DTT: PCBM. Copper‐electrode OSGTs show deep off‐state at zero gate‐source voltage, channel length‐independent on‐state current, and low voltage saturation (γ = 0.22).
Eva Bestelink +6 more
wiley +1 more source
Multifunctional Metasurface with PIN Diode Application Featuring Absorption, Polarization Conversion, and Transmission Functions. [PDF]
Micromachines (Basel)Nobre FDM +3 more
europepmc +1 more source