Results 271 to 280 of about 63,086 (289)

Physical Modelling of 4H-SiC PiN Diodes

Materials Science Forum, 2012
With the recent technological advances in 4H-SiC PiN diode fabrication, simulation tools which enable the accurate and rapid prediction of losses of such devices in power electronics circuits will be increasingly sought-after. To this end, a physical electro-thermal model of the 4H-SiC PiN diode has been developed, which facilitates device optimization
Craig A. Fisher, Michael R. Jennings, Angus T. Bryant, Amador Pérez-Tomás, Peter Michael Gammon, Pierre Brosselard, Philippe Godignon, Philip Andrew Mawby   +7 more
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Practical PIN Diodes

1982
The selection of a PIN to perform a particular microwave switching function begins with the choice of the size of the I region — specifically, its thickness, W, and cross sectional area, A. In practice, however, this characterization is usually accomplished using the related variables junction capacitance, CJ, which depends upon both A and W, and bulk ...
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Transient response of PIN limiter diodes

IEEE MTT-S International Microwave Symposium Digest, 2003
Results of experimental and theoretical studies have determined which physical parameters of PIN diode junctions control their dynamic responses as limiters to fast-risetime microwave pulses. Both RF and DC dynamic impedance measurements were made and compared, with good agreement, to theoretical calculations which model both the junction and intrinsic
R.J. Tan, A.L. Ward, R. Kaul
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Prediction of PIN diode reverse recovery

2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551), 2004
Generally, the reverse recovery issue of diode is difficult to deal with, which causes large added loss and EMI. Different down slopes for diode reverse voltage mean different working conditions, and this paper shows you the general concept with different down slopes and how to predict the reverse recovery current to calculate the relative switching ...
null Yueqing Wang, null Qingyou Zhang, null Jianping Ying, null Chaoqun Sun   +3 more
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SiC power Schottky and PiN diodes

IEEE Transactions on Electron Devices, 2002
The present state of SiC power Schottky and PiN diodes are presented in this paper. The design, fabrication, and characterization of a 130 A Schottky diode, 4.9 kV Schottky diode, and an 8.6 kV 4H-SiC PiN diode, which are considered to be significant milestones in the development of high power SiC diodes, are described in detail.
R. Singh, J.A. Cooper, M.R. Melloch, T.P. Chow, J.W. Palmour   +4 more
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Pin Diode Single-Sideband Modulator

G-MTT 1970 International Microwave Symposium, 1970
A reflection-type single-sideband modulator is described that uses two PIN diodes separated by /spl lambda/ / 8. The modulator can give satisfactory suppression of undesired sidebands in a noncritical circuit, and computer simulations indicate that 20-dB suppression of the unwanted sidebands can be obtained over an octave bandwidth. It can provide even
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Silicon-on-Insulator Pin Diodes.

1987
Abstract : Microwave monolithic integrated circuit (MMMIC) technology using recrystallized silicon-on-insulator substrates would permit PIN diode phase shifters to be fabricated with higher power-handling capability and lower insertion loss than conventional MMIC control circuits using GaAs MESFETs.
Stephen Wu, Ted Letavic, Ronald J. Gutmann, Edward W. Maby   +3 more
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Reactance influence on PIN diode attenuators

International Journal of Electronics, 2006
The reactive component of a PIN diode is known to be a function of current due to conductivity modulation in the I-region. This reactive component can negatively influence predicted attenuation levels in PIN diode attenuators if not properly accounted for. A figure of merit based on the PIN diode parameters, DC forward current, and operation frequency,
Caverly, Robert H., Drozdovski, Nikolai V.   +1 more
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Tunable and wavelength-selective PIN diodes

SPIE Proceedings, 2004
Wavelength Division Multiplexing has become the leading technology for optical transmission systems which operate at 1550 nm. One of the key components of such systems are tunable and wavelength selective receivers. In this paper we present a fibre-coupled two-chip receiver front end, which is highly wavelength selective and tunable over a wide ...
Hubert Halbritter, Chenna Dhanavantri, Martin Strassner, Amer Tarraf, Michael Aziz, Frank Riemenschneider, Sandro Syguda, B. R. Singh, Isabelle Sagnes, Peter Meissner   +9 more
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PIN Diode Weight Circuits.

1979
Abstract : This report is one of a number of technical notes describing various aspects of the design, fabrication, and performance of a demonstration analog feedback processor. In this report we examine the PIN diode weight circuits which are used in the adaptive processor to control the attenuation and phase of the eight signal channels which make up
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