Results 281 to 290 of about 777,156 (336)

Die PIN-Diode

1982
PIN-Dioden sind Bauelemente mit einer Dreischichtstruktur, gekennzeichnet durch eine moglichst undotierte (intrinsic: i) Mittelzone sowie zwei hochdotierte Kontaktzonen (p+, n+) unterschiedlichen Leitungstyps (pin-Struktur). Dieser Aufbau erzeugt ein Bauelement mit hoher Impedanzvariation zwischen Flus- und Sperrbetrieb.
Günther Kesel, Jürgen Hammerschmitt, Eckhard Lange   +2 more
openaire   +1 more source

PIN-diodes for electron detection

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1989
Abstract The counting and spectroscopy of conversion electrons and β-rays was tested with PIN-diodes. The diodes were used in air at normal pressure and at different operational temperatures. The energy resolution and low-energy detection thresholds as well as the time resolution for coincidence counting were measured.
W.-D. Schmidt-Ott, U. Bosch, Th. Möhlenkamp   +2 more
openaire   +1 more source

Seamless MoTe2 Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection

Advanced Optical Materials, 2019
Homojunction PN and PIN diodes based on 2D transition metal dichalcogenide (TMD) MoTe2 are reported in this work. Up to date, for PN junction diodes, type II‐based heterojunction diodes are mainly seen in report, but homojunction PN diodes using 2D ...
Han Sol Lee, June Yeong Lim, Sanghyuck Yu, Yeonsu Jeong, Sam Park, K. Oh, Seongjin Hong, Seunghoon Yang, Chul-Ho Lee, S. Im   +9 more
semanticscholar   +1 more source

Broadband microwave PIN diode attenuators

1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351), 2002
The aim of the paper is to analyse and design variable attenuators equipped with ROV 211 chip PIN diodes. Nonlinear effects in such shunt PIN diode attenuators' are analysed, too. The attenuators are manufactured as hybrid microwave integrated circuits on soft microwave substrate.
S. Iordanescu, G. Simion, C. Anton, A. Muller   +3 more
openaire   +1 more source

32 GBd 16QAM Wireless Transmission in the 300 GHz Band using a PIN Diode for THz Upconversion

Optical Fiber Communications Conference and Exhibition, 2019
We demonstrate THz wireless transmission of 32 GBd QPSK and 16QAM signals using a broadband PIN photodiode. Using an electronic THz receiver operating at 300 GHz, error-free transmission is achieved at 100 Gb/s net rate.
C. Castro, S. Nellen, R. Elschner, I. Sackey, R. Emmerich, T. Merkle, B. Globisch, D. Felipe, C. Schubert   +8 more
semanticscholar   +1 more source

AlGaAs anode heterojunction PIN diodes

physica status solidi c, 2013
AbstractThis paper describes the development of a heterojunction AlGaAs/GaAs PIN diode as a revolutionary improvement as compared to the homojunction GaAs PIN diode commonly used in microwave systems for commercial and military applications. In a heterojunction device the injected carriers from the junction are confined by the bandgap discontinuity ...
T. Boles, J. Brogle, D. Hoag, D. Carlson
openaire   +1 more source

Avalanche breakdown in read diodes and pin diodes

Solid-State Electronics, 1968
Abstract The avalanche breakdown voltages, VB, for Ge and Si Read (p+nin+ or n+pip+) and pin diodes have been evaluated numerically. For the idealized Read diode the static characteristics of the avalanche region, namely the breakdown field, the width of the avalanche region and the voltage drop, VA, across the avalanche region have also been ...
G. Gibbons, S.M. Sze
openaire   +1 more source

Optically activated pin diode switch

IEEE Conference Record of the 1988 Eighteenth Power Modulator Symposium, 2003
The authors discuss the design, fabrication, and application of optically activated switches. A 0.25 m-thick Si pin diode, 3.0 mm in diameter, was tested using an 808 nm 2-D diode laser array measuring about 2 mm*5 mm as an optical source. Preliminary testing of the diode has demonstrated a holding voltage of 1000 V and a conduction of 10 A upon ...
A. Rosen, P. Srabile, W. Janton, A. Gombar, J. McShea, R.A. Buckingham, A. Rosenberg, P. Herczfeld, A. Bahasadri   +8 more
openaire   +1 more source

Numerical Modelling of PIN Diodes

IMA Journal of Numerical Analysis, 1984
Summary: The coupled non-linear partial differential equations describing the behaviour of PIN diodes are solved using a conservative finite-difference scheme. For such problems the conservation of certain quantities is particularly important and the consistency of the numerical scheme is demonstrated.
openaire   +1 more source

High Power Pin Diode Limiting

1967 G-MTT International Microwave Symposium Digest, 1967
Conventional high power diode limiters use a multiplicity of varactor diodes in various microwave circuit configurations. The higher power handling PIN diode is normally unsuitable as a passive limiter due to its slow speed of response. The I region thickness of this PIN ranges between one and five mils with a voltage breakdown range of 200 to 1000 ...
P. Basken, K.E. Mortenson, N. Brown
openaire   +1 more source