Results 301 to 310 of about 66,270 (345)
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Numerical Modelling of PIN Diodes
IMA Journal of Numerical Analysis, 1984Summary: The coupled non-linear partial differential equations describing the behaviour of PIN diodes are solved using a conservative finite-difference scheme. For such problems the conservation of certain quantities is particularly important and the consistency of the numerical scheme is demonstrated.
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1982
PIN-Dioden sind Bauelemente mit einer Dreischichtstruktur, gekennzeichnet durch eine moglichst undotierte (intrinsic: i) Mittelzone sowie zwei hochdotierte Kontaktzonen (p+, n+) unterschiedlichen Leitungstyps (pin-Struktur). Dieser Aufbau erzeugt ein Bauelement mit hoher Impedanzvariation zwischen Flus- und Sperrbetrieb.
Günther Kesel +2 more
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PIN-Dioden sind Bauelemente mit einer Dreischichtstruktur, gekennzeichnet durch eine moglichst undotierte (intrinsic: i) Mittelzone sowie zwei hochdotierte Kontaktzonen (p+, n+) unterschiedlichen Leitungstyps (pin-Struktur). Dieser Aufbau erzeugt ein Bauelement mit hoher Impedanzvariation zwischen Flus- und Sperrbetrieb.
Günther Kesel +2 more
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3rd European Microwave Conference, 1973, 1973
Theory and experiments are presented relating PIN diode junction properties to limit level, spike leakage, and recovery.
R. Garver, F. Reggia, R. Callow
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Theory and experiments are presented relating PIN diode junction properties to limit level, spike leakage, and recovery.
R. Garver, F. Reggia, R. Callow
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2010 Second Pacific-Asia Conference on Circuits, Communications and System, 2010
In this paper, a multi-application PIN diode is presented. The PIN diode structure is similar to conventional PIN diodes, but only difference is that a layer is used in the middle of layers. The diode has 4 pins. Proportional to the applied voltage to the two control pins, it can be achieved a value arbitrary of series capacitance and resistance.
Ebrahim Abiri +3 more
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In this paper, a multi-application PIN diode is presented. The PIN diode structure is similar to conventional PIN diodes, but only difference is that a layer is used in the middle of layers. The diode has 4 pins. Proportional to the applied voltage to the two control pins, it can be achieved a value arbitrary of series capacitance and resistance.
Ebrahim Abiri +3 more
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Frequency reconfigurable antenna using PIN diodes
2014 Twentieth National Conference on Communications (NCC), 2014A compact frequency reconfigurable double slot antenna for wireless communication is presented. The proposed antenna consists of double slot with six RF PIN diodes placed at different position on the ground plane to achieve frequency reconfigurability. Based on the switching state of the PIN diode the antenna is capable of operating at eleven different
R. Jothi Chitra, Velmurugan Nagarajan
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Physical Modelling of 4H-SiC PiN Diodes
Materials Science Forum, 2012With the recent technological advances in 4H-SiC PiN diode fabrication, simulation tools which enable the accurate and rapid prediction of losses of such devices in power electronics circuits will be increasingly sought-after. To this end, a physical electro-thermal model of the 4H-SiC PiN diode has been developed, which facilitates device optimization
Craig A. Fisher +7 more
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PIN silicon diode fast neutron detector
Radiation Protection Dosimetry, 2005Two batches of diodes, with different structural ratios (the ratio of area and thickness), were made using different manufacturing processes. The energy response of the first batch to 15 kinds of monoenergetic neutrons ranging from 180 keV to 17.56 MeV was tested, and the neutron source response of both batches to 239Pu-Be neutron source was measured ...
Chunzhi, Zhou +2 more
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Transient response of PIN limiter diodes
IEEE MTT-S International Microwave Symposium Digest, 2003Results of experimental and theoretical studies have determined which physical parameters of PIN diode junctions control their dynamic responses as limiters to fast-risetime microwave pulses. Both RF and DC dynamic impedance measurements were made and compared, with good agreement, to theoretical calculations which model both the junction and intrinsic
R.J. Tan, A.L. Ward, R. Kaul
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Silicon-on-Insulator Pin Diodes.
1987Abstract : Microwave monolithic integrated circuit (MMMIC) technology using recrystallized silicon-on-insulator substrates would permit PIN diode phase shifters to be fabricated with higher power-handling capability and lower insertion loss than conventional MMIC control circuits using GaAs MESFETs.
Stephen Wu +3 more
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Recombination in the end regions of pin diodes
Solid-State Electronics, 1979The recombination currents in the end regions of pin diodes have been investigated by means of an IR absorption technique. The diodes had graded doping profiles in the end regions, and a wide base (374 μm). It has been found experimentally that over a wide range of currents the recombination is proportional to the square of the injected carrier density
F. Berz, R.W. Cooper, S. Fagg
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