Results 311 to 320 of about 66,270 (345)
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1982
The selection of a PIN to perform a particular microwave switching function begins with the choice of the size of the I region — specifically, its thickness, W, and cross sectional area, A. In practice, however, this characterization is usually accomplished using the related variables junction capacitance, CJ, which depends upon both A and W, and bulk ...
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The selection of a PIN to perform a particular microwave switching function begins with the choice of the size of the I region — specifically, its thickness, W, and cross sectional area, A. In practice, however, this characterization is usually accomplished using the related variables junction capacitance, CJ, which depends upon both A and W, and bulk ...
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1967 G-MTT International Microwave Symposium Digest, 1967
Conventional high power diode limiters use a multiplicity of varactor diodes in various microwave circuit configurations. The higher power handling PIN diode is normally unsuitable as a passive limiter due to its slow speed of response. The I region thickness of this PIN ranges between one and five mils with a voltage breakdown range of 200 to 1000 ...
P. Basken, K.E. Mortenson, N. Brown
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Conventional high power diode limiters use a multiplicity of varactor diodes in various microwave circuit configurations. The higher power handling PIN diode is normally unsuitable as a passive limiter due to its slow speed of response. The I region thickness of this PIN ranges between one and five mils with a voltage breakdown range of 200 to 1000 ...
P. Basken, K.E. Mortenson, N. Brown
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Prediction of PIN diode reverse recovery
2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551), 2004Generally, the reverse recovery issue of diode is difficult to deal with, which causes large added loss and EMI. Different down slopes for diode reverse voltage mean different working conditions, and this paper shows you the general concept with different down slopes and how to predict the reverse recovery current to calculate the relative switching ...
null Yueqing Wang +3 more
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A charge-control model of the pin diode
IEEE Transactions on Electron Devices, 1976A charge-control model of the pin diode is developed which fully accounts for the additional contact-layer storage charges. This part of the storage charge is shown to greatly influence both the forward steady state and the turn-off transient (switching time and transition-loss).
K. Schunemann, J. Muller
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The Forward Characteristic of the Pin Diode
Bell System Technical Journal, 1956A theory is given for the forward current-voltage characteristic of the PIN diffused junction silicon diode. The theory predicts that the device should obey a simple PN diode characteristic until the current density approaches 200 amp/cm2. At higher currents an additional potential drop occurs across the middle region proportional to the square root of
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Optically activated pin diode switch
IEEE Conference Record of the 1988 Eighteenth Power Modulator Symposium, 2003The authors discuss the design, fabrication, and application of optically activated switches. A 0.25 m-thick Si pin diode, 3.0 mm in diameter, was tested using an 808 nm 2-D diode laser array measuring about 2 mm*5 mm as an optical source. Preliminary testing of the diode has demonstrated a holding voltage of 1000 V and a conduction of 10 A upon ...
A. Rosen +8 more
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Broadband microwave PIN diode attenuators
1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351), 2002The aim of the paper is to analyse and design variable attenuators equipped with ROV 211 chip PIN diodes. Nonlinear effects in such shunt PIN diode attenuators' are analysed, too. The attenuators are manufactured as hybrid microwave integrated circuits on soft microwave substrate.
S. Iordanescu +3 more
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Reactance influence on PIN diode attenuators
International Journal of Electronics, 2006The reactive component of a PIN diode is known to be a function of current due to conductivity modulation in the I-region. This reactive component can negatively influence predicted attenuation levels in PIN diode attenuators if not properly accounted for. A figure of merit based on the PIN diode parameters, DC forward current, and operation frequency,
Caverly, Robert H. +1 more
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1979
Abstract : This report is one of a number of technical notes describing various aspects of the design, fabrication, and performance of a demonstration analog feedback processor. In this report we examine the PIN diode weight circuits which are used in the adaptive processor to control the attenuation and phase of the eight signal channels which make up
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Abstract : This report is one of a number of technical notes describing various aspects of the design, fabrication, and performance of a demonstration analog feedback processor. In this report we examine the PIN diode weight circuits which are used in the adaptive processor to control the attenuation and phase of the eight signal channels which make up
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Pin Diode Single-Sideband Modulator
G-MTT 1970 International Microwave Symposium, 1970A reflection-type single-sideband modulator is described that uses two PIN diodes separated by /spl lambda/ / 8. The modulator can give satisfactory suppression of undesired sidebands in a noncritical circuit, and computer simulations indicate that 20-dB suppression of the unwanted sidebands can be obtained over an octave bandwidth. It can provide even
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