Results 301 to 310 of about 777,156 (336)
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SiC power Schottky and PiN diodes
IEEE Transactions on Electron Devices, 2002The present state of SiC power Schottky and PiN diodes are presented in this paper. The design, fabrication, and characterization of a 130 A Schottky diode, 4.9 kV Schottky diode, and an 8.6 kV 4H-SiC PiN diode, which are considered to be significant milestones in the development of high power SiC diodes, are described in detail.
R. Singh +4 more
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Pin Diode Single-Sideband Modulator
G-MTT 1970 International Microwave Symposium, 1970A reflection-type single-sideband modulator is described that uses two PIN diodes separated by /spl lambda/ / 8. The modulator can give satisfactory suppression of undesired sidebands in a noncritical circuit, and computer simulations indicate that 20-dB suppression of the unwanted sidebands can be obtained over an octave bandwidth. It can provide even
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Silicon-on-Insulator Pin Diodes.
1987Abstract : Microwave monolithic integrated circuit (MMMIC) technology using recrystallized silicon-on-insulator substrates would permit PIN diode phase shifters to be fabricated with higher power-handling capability and lower insertion loss than conventional MMIC control circuits using GaAs MESFETs.
Stephen Wu +3 more
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Reactance influence on PIN diode attenuators
International Journal of Electronics, 2006The reactive component of a PIN diode is known to be a function of current due to conductivity modulation in the I-region. This reactive component can negatively influence predicted attenuation levels in PIN diode attenuators if not properly accounted for. A figure of merit based on the PIN diode parameters, DC forward current, and operation frequency,
Caverly, Robert H. +1 more
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Tunable and wavelength-selective PIN diodes
SPIE Proceedings, 2004Wavelength Division Multiplexing has become the leading technology for optical transmission systems which operate at 1550 nm. One of the key components of such systems are tunable and wavelength selective receivers. In this paper we present a fibre-coupled two-chip receiver front end, which is highly wavelength selective and tunable over a wide ...
Hubert Halbritter +9 more
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1979
Abstract : This report is one of a number of technical notes describing various aspects of the design, fabrication, and performance of a demonstration analog feedback processor. In this report we examine the PIN diode weight circuits which are used in the adaptive processor to control the attenuation and phase of the eight signal channels which make up
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Abstract : This report is one of a number of technical notes describing various aspects of the design, fabrication, and performance of a demonstration analog feedback processor. In this report we examine the PIN diode weight circuits which are used in the adaptive processor to control the attenuation and phase of the eight signal channels which make up
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Latency Characterization of Gated Radiotherapy Treatment Beams Using a PIN Diode Circuit
, 2016Background: Radiotherapy is based on the premise of accurate dose delivery to target volumes within a patient, while minimizing dose to surrounding tissues.
M. Lempart +4 more
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GaAs MMIC PIN Diodes SPDT Switcher
2006 16th International Crimean Microwave and Telecommunication Technology, 2006Presented in this paper is the description of GaAs MMIC PIN diodes switch design. The process included experimental part of pin diodes parameters determination. Epitaxial wafers substance was produced using VPE.
A. Barov, S. Gushchin
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1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability
IEEE Journal of Emerging and Selected Topics in Power Electronics, 2019This paper presents the design and experimental analysis of 1200-V 4H-silicon carbide (SiC) merged PiN Schottky (MPS) diodes. Design considerations and device performances of the MPS diodes are compared with those of the junction barrier Schottky (JBS ...
Jiupeng Wu +3 more
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X-Ray Spectroscopy with PIN diodes
AIP Conference Proceedings, 2006A PIN diode and a low noise preamplifier are included in a nuclear spectroscopy chain for X‐ray measurements. This is a laboratory session designed to review the main concepts needed to set up the detector‐preamplifier array and to make measurements of X‐ray energy spectra with a room temperature PIN diode.
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